VS-GP400TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 400 A Proprietary Vishay IGBT Silicon L Series FEATURES Trench PT IGBT technology Low V CE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al O DBC 2 3 UL approved file E78996 Designed for industrial level Dual INT-A-PAK Low Prole Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 600 V CES BENEFITS I DC at T = 103 C 400 A C C Increased operating efficiency V (typical) at 400 A, 25 C 1.30 V CE(on) Performance optimized as output inverter stage for TIG Speed DC to 1 kHz welding machines Package Dual INT-A-PAK low profile Direct mounting on heatsink Circuit configuration Half bridge Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 758 C (1) Continuous collector current I C T = 80 C 525 C Pulsed collector current I n/a CM A Clamped inductive load current I n/a LM T = 25 C 219 C Diode continuous forward current I F T = 80 C 145 C Gate to emitter voltage V 20 V GE T = 25 C 1563 C Maximum power dissipation (IGBT) P W D T = 80 C 875 C RMS isolation voltage V Any terminal to case (V t = 1 s, T = 25 C) 3500 V ISOL RMS J Operating junction and storage temperature range T , T -40 to +150 C J STG Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Revision: 11-Dec-17 Document Number: 95768 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GP400TD60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 500 A 600 - - BR(CES) GE C V = 15 V, I = 200 A - 1.13 1.24 GE C V = 15 V, I = 400 A - 1.30 1.52 GE C Collector to emitter voltage V CE(on) V = 15 V, I = 200 A, T = 125 C - 1.03 - V GE C J V = 15 V, I = 400 A, T = 125 C - 1.26 - GE C J V = V , I = 9.6 mA 4.9 5.9 8.8 CE GE C Gate threshold voltage V GE(th) V = V , I = 9.6 mA, T = 125 C - 3.2 - CE GE C J Temperature coefficient of threshold V /TV = V , I = 9.6 mA, (25 C to 125 C) - -27 - mV/C GE(th) CE GE C voltage Forward transconductance g V = 20 V, I = 50 A - 74 - S fe CE C Transfer characteristics V V = 20 V, I = 400 A - 10.7 - V GE CE C V = 0 V, V = 600 V - 5 200 A GE CE Collector to emitter leakage current I CES V = 0 V, V = 600 V, T = 125 C - 1.5 - mA GE CE J I = 200 A - 1.42 1.55 FM I = 400 A - 1.76 1.98 FM Diode forward voltage drop V V FM I = 200 A, T = 125 C - 1.43 - FM J I = 400 A, T = 125 C - 1.88 - FM J Gate to emitter leakage current I V = 20 V - - 750 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching energy E -6.3 - on Turn-off switching energy E -45 - mJ off Total switching energy E - 51.3 - tot I = 400 A, V = 300 V, V = 15 V, C CC GE Turn-on delay time t - 633 - d(on) R = 1.5 , L = 500 H, T = 25 C g J Rise time t - 254 - r ns Turn-off delay time t - 715 - d(off) Fall time t - 490 - f Turn-on switching loss E -7.2 - on Turn-off switching loss E -74 - mJ off Total switching loss E - 81.2 - tot I = 400 A, V = 300 V, V = 15 V, C CC GE Turn-on delay time t - 595 - d(on) R = 1.5 , L = 500 H, T = 125 C g J Rise time t - 250 - r ns Turn-off delay time t - 950 - d(off) Fall time t - 865 - f T = 150 C, I = n/a, V = 300 V J C CC Reverse bias safe operating area RBSOA V = 600 V, R = 1.5 V = 15 V to 0 V, Fullsquare P g GE L = 500 H Diode reverse recovery time t - 123 - ns rr I = 400 A, R = 1.5 F g Diode peak reverse current I - 107 - A rr V = 300 V, T = 25 C CC J Diode recovery charge Q -8.1 - C rr Diode reverse recovery time t - 167 - ns rr I = 400 A, R = 1.5 F g Diode peak reverse current I - 140 - A rr V = 300 V, T = 125 C CC J Diode recovery charge Q - 14.7 - C rr Revision: 11-Dec-17 Document Number: 95768 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000