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X-On Electronics has gained recognition as a prominent supplier of SKP02N60 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SKP02N60 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SKP02N60 Infineon

SKP02N60 electronic component of Infineon
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See Product Specifications
Part No.SKP02N60
Manufacturer: Infineon
Category: IGBT Transistors
Description: Infineon Technologies IGBT Transistors FAST IGBT NPT TECH 600V 2A
Datasheet: SKP02N60 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.4292
10 : USD 1.1541
100 : USD 0.9193
500 : USD 0.8052
1000 : USD 0.6908
2500 : USD 0.6908
5000 : USD 0.6886
10000 : USD 0.6357
25000 : USD 0.6251
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Package / Case
Packaging
Technology
Mounting Style
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SKP02N60 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SKP02N60 and other electronic components in the IGBT Transistors category and beyond.

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SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower E compared to previous generation off combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability (TO-220AB) Very soft, fast recovery anti-parallel Emitter Controlled Diode Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : SKP02N60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic R IGBT thermal resistance, 4.2 K/W t h J C junction case Diode thermal resistance, R 7 t h J C D junction case R Thermal resistance, 62 t h J A PG-TO-220-3-1 junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =500 A 600 - - V ( B R ) C E S G E C V V = 15V, I =2A Collector-emitter saturation voltage C E ( s a t ) G E C 1.7 1.9 2.4 T =25 C j - 2.2 2.7 T =150 C j Diode forward voltage V V =0V, I =2.9A F G E F T =25 C 1.2 1.4 1.8 j - 1.25 1.65 T =150 C j V Gate-emitter threshold voltage I =150 A,V =V 3 4 5 G E ( t h) C C E G E Zero gate voltage collector current I V =600V,V =0V A C E S C E G E T =25 C - - 20 j - - 250 T =150 C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =2A - 1.6 - S f s C E C Dynamic Characteristic Input capacitance C V =25V, - 142 170 pF i s s C E V =0V, Output capacitance C - 18 22 o s s G E f=1MHz Reverse transfer capacitance C - 10 12 r s s Gate charge Q V =480V, I =2A - 14 18 nC G a t e C C C V =15V G E Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 2) Short circuit collector current I V =15V,t 10 s - 20 - A C ( S C ) G E S C V 600V, C C T 150 C j 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.3 12.06.2013

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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