SGP20N60 SGW20N60 Fast IGBT in NPT-technology C 75% lower E compared to previous generation off combined with low conduction losses Short circuit withstand time 10 s G Designed for: E - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : SGP20N60 SGW20N60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.7 K/W thJC junction case Thermal resistance, R PG-TO-220-3-1 62 thJA junction ambient PG-TO-247-3-21 40 Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =500A 600 - - V (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =20A CE(sat) GE C 1.7 2 2.4 T =25C j - 2.4 2.9 T =150C j Gate-emitter threshold voltage V 3 4 5 GE(th) I =700A,V =V C CE GE Zero gate voltage collector current I V =600V,V =0V A CES CE GE - - 40 T =25C j - - 2500 T =150C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =20A - 14 - S fs CE C Dynamic Characteristic Input capacitance C - V =25V, 1100 1320 pF iss CE V =0V, Output capacitance C - 107 128 oss GE f=1MHz Reverse transfer capacitance C - 63 76 rss Gate charge Q V =480V, I =20A - 100 130 nC Gate CC C V =15V GE Internal emitter inductance L PG-TO-220-3-1 - 7 - nH E measured 5mm (0.197 in.) from case PG-TO-247-3-21 - 13 - 2) Short circuit collector current I - 200 - A C(SC) V =15V,t 10s GE SC V 600V, CC T 150C j 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.4 Nov 09