Preliminary VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery T maximum = 150 C J SOT-227 Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline PRODUCT SUMMARY UL approved file E78996 V 1200 V CES Material categorization: for definitions of compliance (1) I 175 A at 90 C C(DC) please see www.vishay.com/doc 99912 V typical at 100 A, 25 C 1.73 V CE(on) I 32 A at 90 C BENEFITS F(DC) Speed 8 kHz to 30 kHz Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Package SOT-227 Easy to assemble and parallel Circuit Single switch diode Direct mounting to heatsink Note (1) Maximum collector current admitted is 100 A, to not exceed the Plug-in compatible with other SOT-227 packages maximum temperature of terminals Very low V CE(on) Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V 1200 V CES T = 25 C 288 C (1) Continuous collector current I C T = 90 C 175 C Pulsed collector current I 450 CM A Clamped inductive load current I 450 LM T = 25 C 54 C Diode continuous forward current I F T = 90 C 32 C Gate to emitter voltage V 20 V GE T = 25 C 1087 C Power dissipation, IGBT P D T = 90 C 522 C W T = 25 C 219 C Power dissipation, diode P D T = 90 C 105 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Note (1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals Revision: 31-May-16 Document Number: 93990 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Preliminary VS-GT175DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 250 A 1200 - - BR(CES) GE C V = 15 V, I = 100 A - 1.73 2.1 GE C Collector to emitter voltage V V = 15 V, I = 100 A, T = 125 C - 1.98 2.2 CE(on) GE C J V = 15 V, I = 100 A, T = 150 C - 2.05 - V GE C J V = V , I = 250 A - 5 - CE GE C Gate threshold voltage V V = V , I = 7.5 mA 4.9 5.9 7.9 GE(th) CE GE C V = V , I = 250 A, T = 125 C - 2.9 - CE GE C J Temperature coefficient of threshold voltage V / T V = V , I = 1 mA (25 C to 125 C) - -17.6 - mV/C GE(th) J CE GE C V = 0 V, V = 1200 V - 0.9 100 A GE CE Collector to emitter leakage current I V = 0 V, V = 1200 V, T = 125 C - 0.85 10 CES GE CE J mA V = 0 V, V = 1200 V, T = 150 C - 4 20 GE CE J I = 40 A, V = 0 V - 3.12 3.44 F GE Forward voltage drop, diode V I = 40 A, V = 0 V, T = 125 C - 3.15 3.47 V FM F GE J I = 40 A, V = 0 V, T = 150 C - 3.25 - F GE J Gate to emitter leakage current I V = 20 V - - 200 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 830 - g I = 150 A (t < 400 s, D < 2 %), C p Gate to emitter charge (turn-on) Q - 180 - nC ge V = 600 V, V = 15 V CC GE Gate to collector charge (turn-on) Q - 380 - gc Turn-on switching loss E -4.8 - on Turn-off switching loss E -7.0 - mJ off Total switching loss E -11.8 - tot I = 100 A, V = 720 V, C CC Turn-on delay time t V = 15 V, R = 2.2 - 274 - d(on) GE g L = 500 H, T = 25 C J Rise time t -67- r ns Energy losses Turn-off delay time t - 271 - d(off) include tail Fall time t - 177 - f and diode recovery Turn-on switching loss E -6.0 - on Diode used Turn-off switching loss E -10.4 - mJ off HFA16PB120 Total switching loss E -16.4 - tot I = 100 A, V = 720 V, C CC Turn-on delay time t V = 15 V, R = 2.2 - 285 - d(on) GE g L = 500 H, T = 125 C J Rise time t -75- r ns Turn-off delay time t - 306 - d(off) Fall time t - 244 - f T = 150 C, I = 450 A, R = 4.7 J C g Reverse bias safe operating area RBSOA V = 15 V to 0 V, V = 600 V, Fullsquare GE CC V = 1200 V, L = 500 H P Diode reverse recovery time t - 164 - ns rr Diode peak reverse current I I = 50 A, dI /dt = 200 A/s, V = 400 V -12- A rr F F R Diode recovery charge Q - 994 - nC rr Diode reverse recovery time t - 230 - ns rr I = 50 A, dI /dt = 200 A/s, F F Diode peak reverse current I -16.5 - A rr V = 400 V, T = 125 C R J Diode recovery charge Q - 1864 - nC rr T = 150 C, R = 22 , J g Short circuit safe operating area SCSOA V = 15 V to 0 V, V = 900 V, 10 s GE CC V = 1200 V p Revision: 31-May-16 Document Number: 93990 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000