X-On Electronics has gained recognition as a prominent supplier of VS-GT175DA120U IGBT Modules across the USA, India, Europe, Australia, and various other global locations. VS-GT175DA120U IGBT Modules are a product manufactured by Vishay. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

VS-GT175DA120U Vishay

VS-GT175DA120U electronic component of Vishay
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See Product Specifications
Part No.VS-GT175DA120U
Manufacturer: Vishay
Category: IGBT Modules
Description: IGBT Modules Output & SW Modules - SOT-227 IGBT
Datasheet: VS-GT175DA120U Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 129.61
5 : USD 125.593
10 : USD 124.943
25 : USD 120.77
50 : USD 119.119
100 : USD 118.989
250 : USD 118.989
N/A

Obsolete
0
MOQ : 10
Multiples : 10
10 : USD 130.4833
25 : USD 126.1342
50 : USD 124.4045
100 : USD 117.4485
N/A

Obsolete
   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Package / Case
Operating Temperature Classification
Operating Temperature Min
Gate To Emitter Voltage Max
Channel Type
Collector-Emitter Voltage
Operating Temperature Max
Rad Hardened
Brand
Mounting Style
Cnhts
Hts Code
Maximum Gate Emitter Voltage
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the VS-GT175DA120U from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-GT175DA120U and other electronic components in the IGBT Modules category and beyond.

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Preliminary VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery T maximum = 150 C J SOT-227 Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline PRODUCT SUMMARY UL approved file E78996 V 1200 V CES Material categorization: for definitions of compliance (1) I 175 A at 90 C C(DC) please see www.vishay.com/doc 99912 V typical at 100 A, 25 C 1.73 V CE(on) I 32 A at 90 C BENEFITS F(DC) Speed 8 kHz to 30 kHz Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Package SOT-227 Easy to assemble and parallel Circuit Single switch diode Direct mounting to heatsink Note (1) Maximum collector current admitted is 100 A, to not exceed the Plug-in compatible with other SOT-227 packages maximum temperature of terminals Very low V CE(on) Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V 1200 V CES T = 25 C 288 C (1) Continuous collector current I C T = 90 C 175 C Pulsed collector current I 450 CM A Clamped inductive load current I 450 LM T = 25 C 54 C Diode continuous forward current I F T = 90 C 32 C Gate to emitter voltage V 20 V GE T = 25 C 1087 C Power dissipation, IGBT P D T = 90 C 522 C W T = 25 C 219 C Power dissipation, diode P D T = 90 C 105 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Note (1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals Revision: 31-May-16 Document Number: 93990 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Preliminary VS-GT175DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 250 A 1200 - - BR(CES) GE C V = 15 V, I = 100 A - 1.73 2.1 GE C Collector to emitter voltage V V = 15 V, I = 100 A, T = 125 C - 1.98 2.2 CE(on) GE C J V = 15 V, I = 100 A, T = 150 C - 2.05 - V GE C J V = V , I = 250 A - 5 - CE GE C Gate threshold voltage V V = V , I = 7.5 mA 4.9 5.9 7.9 GE(th) CE GE C V = V , I = 250 A, T = 125 C - 2.9 - CE GE C J Temperature coefficient of threshold voltage V / T V = V , I = 1 mA (25 C to 125 C) - -17.6 - mV/C GE(th) J CE GE C V = 0 V, V = 1200 V - 0.9 100 A GE CE Collector to emitter leakage current I V = 0 V, V = 1200 V, T = 125 C - 0.85 10 CES GE CE J mA V = 0 V, V = 1200 V, T = 150 C - 4 20 GE CE J I = 40 A, V = 0 V - 3.12 3.44 F GE Forward voltage drop, diode V I = 40 A, V = 0 V, T = 125 C - 3.15 3.47 V FM F GE J I = 40 A, V = 0 V, T = 150 C - 3.25 - F GE J Gate to emitter leakage current I V = 20 V - - 200 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 830 - g I = 150 A (t < 400 s, D < 2 %), C p Gate to emitter charge (turn-on) Q - 180 - nC ge V = 600 V, V = 15 V CC GE Gate to collector charge (turn-on) Q - 380 - gc Turn-on switching loss E -4.8 - on Turn-off switching loss E -7.0 - mJ off Total switching loss E -11.8 - tot I = 100 A, V = 720 V, C CC Turn-on delay time t V = 15 V, R = 2.2 - 274 - d(on) GE g L = 500 H, T = 25 C J Rise time t -67- r ns Energy losses Turn-off delay time t - 271 - d(off) include tail Fall time t - 177 - f and diode recovery Turn-on switching loss E -6.0 - on Diode used Turn-off switching loss E -10.4 - mJ off HFA16PB120 Total switching loss E -16.4 - tot I = 100 A, V = 720 V, C CC Turn-on delay time t V = 15 V, R = 2.2 - 285 - d(on) GE g L = 500 H, T = 125 C J Rise time t -75- r ns Turn-off delay time t - 306 - d(off) Fall time t - 244 - f T = 150 C, I = 450 A, R = 4.7 J C g Reverse bias safe operating area RBSOA V = 15 V to 0 V, V = 600 V, Fullsquare GE CC V = 1200 V, L = 500 H P Diode reverse recovery time t - 164 - ns rr Diode peak reverse current I I = 50 A, dI /dt = 200 A/s, V = 400 V -12- A rr F F R Diode recovery charge Q - 994 - nC rr Diode reverse recovery time t - 230 - ns rr I = 50 A, dI /dt = 200 A/s, F F Diode peak reverse current I -16.5 - A rr V = 400 V, T = 125 C R J Diode recovery charge Q - 1864 - nC rr T = 150 C, R = 22 , J g Short circuit safe operating area SCSOA V = 15 V to 0 V, V = 900 V, 10 s GE CC V = 1200 V p Revision: 31-May-16 Document Number: 93990 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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