VS-GT80DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A FEATURES Trench IGBT technology Positive V temperature coefficient CE(on) Square RBSOA 10 s short circuit capability HEXFRED low Q , low switching energy rr T maximum = 150 C J Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance V 1200 V please see www.vishay.com/doc 99912 CES I DC 80 A at 104 C C BENEFITS V typical at 80 A, 25 C 2.0 V CE(on) Designed for increased operating efficiency in power Speed 8 kHz to 30 kHz conversion: UPS, SMPS, welding, induction heating Package SOT-227 Easy to assemble and parallel Circuit configuration Single switch with AP diode Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V 1200 V CES T = 25 C 139 C Continuous collector current I C T = 90 C 93 C Pulsed collector current I 170 CM Clamped inductive load current I 250 A LM T = 25 C 98 C Diode continuous forward current I F T = 90 C 61 C Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 350 FSM J Gate to emitter voltage V 20 V GE T = 25 C 658 C Power dissipation, IGBT P D T = 90 C 316 C W T = 25 C 403 C Power dissipation, diode P D T = 90 C 194 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Revision: 10-Sep-2019 Document Number: 96379 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GT80DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 2.6 mA 1200 - - BR(CES) GE C V = 15 V, I = 80 A - 2.0 2.55 GE C Collector to emitter voltage V V = 15 V, I = 80 A, T = 125 C - 2.4 - V CE(on) GE C J V = 15 V, I = 80 A, T = 150 C - 2.5 - GE C J Gate threshold voltage V V = V , I = 2.6 mA 4.75 5.7 7.0 GE(th) CE GE C Temperature coefficient of threshold voltage V / T V = V , I = 2.6 mA (25 C to 125 C) - -12 - mV/C GE(th) J CE GE C V = 0 V, V = 1200 V - 1.0 100 A GE CE Collector to emitter leakage current I CES V = 0 V, V = 1200 V, T = 125 C - 0.9 - mA GE CE J I = 80 A, V = 0 V - 2.9 3.5 F GE Forward voltage drop V I = 80 A, V = 0 V, T = 125 C - 3.1 - V FM F GE J I = 80 A, V = 0 V, T = 150 C - 3.1 - F GE J Gate to emitter leakage current I V = 20 V - - 220 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q V = -15 V, V = 15 V - 570 - g GE GE Input capacitance C - 4400 - ies V = 25 V, V = 0 V, f = 1 MHz pF CE GE Reverse transfer capacitance C - 235 - res Turn-on switching loss E -3.0 - on I = 80 A, V = 600 V, V = 15 V, C CC GE Turn-off switching loss E R = 1.0 L = 500 H, -3.2 - mJ off g T = 25 C J Total switching loss E -6.2 - tot Turn-on switching loss E Energy losses -3.9 - on include tail and Turn-off switching loss E -5.5 - mJ off diode recovery Total switching loss E -9.4 - tot Diode used I = 80 A, V = 600 V, V = 15 V, C CC GE HFA16PB120 Turn-on delay time t - 134 - d(on) R = 1.0 L = 500 H, T = 125 C g J Rise time t -65 - r ns Turn-off delay time t - 281 - d(off) Fall time t - 155 - f T = 150 C, I = 250 A, R = 1.0 V = 15 V to 0 V, J C g GE Reverse bias safe operating area RBSOA Fullsquare V = 800 V, V = 1200 V, L = 500 H CC P Diode reverse recovery time t - 179 - ns rr Diode peak reverse current I I = 50 A, dI /dt = 200 A/s, V = 400 V - 11.5 - A rr F F R Diode recovery charge Q - 1029 - nC rr Diode reverse recovery time t - 275 - ns rr I = 50 A, dI /dt = 200 A/s, F F Diode peak reverse current I - 17.8 - A rr V = 400 V, T = 125 C rr J Diode recovery charge Q - 2451 - nC rr Short circuit safe operating area SCSOA V = 15 V, V = 800 V, V max.= 1200 V, T = 150 C 10 s GE CC CE J THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T , T -40 - 150 C J Stg IGBT --0.19 Junction to case R thJC Diode --0.31 C/W Case to heatsink R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf. in) Mounting torque Torque to heatsink - - 1.3 (11.5)) Nm (lbf. in) Case style SOT-227 Revision: 10-Sep-2019 Document Number: 96379 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000