X-On Electronics has gained recognition as a prominent supplier of STT800N16P55XPSA1 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. STT800N16P55XPSA1 Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

STT800N16P55XPSA1 Infineon

STT800N16P55XPSA1 electronic component of Infineon
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Part No.STT800N16P55XPSA1
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules THYR / DIODE MODULE DK
Datasheet: STT800N16P55XPSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 318.769 ea
Line Total: USD 318.77 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 318.769
10 : USD 310.662

0
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 515.5469

   
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Gate Trigger Current - Igt
Holding Current Ih Max
Transistor Polarity
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the STT800N16P55XPSA1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STT800N16P55XPSA1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / technical information Sanftanlauf-Modul sTT800 N16P55 Soft starter Module Key Parameters V / V 1600 V DRM RRM I 800 A overload(21s) I 6300 A TSM V 0,9 V T0 r 0,83 m T R 0,196 K/W thJA (21s) Merkmale Features Druckkontakt-Technologie fr hohe Zuverlssigkeit Pressure contact technology for high reliability Advanced Medium Power Technology (AMPT) Advanced Medium Power Technology (AMPT) Integrierter optimierter Khlkrper Integrated optimized heatsink Typische Anwendungen Typical Applications Sanftanlasser Soft starter Bypass-Schalter Bypass switch Leistungssteller Power controller Statischer Umschalter Static switch content of customer DMX code DMX code DMX code digit digit quantity serial number 1..5 5 SAP material number 6..12 7 Internal production order number 13..20 8 datecode (production year) 21..22 2 datecode (production week) 23..24 2 www.ifbip.com support infineon-bip.com Date of Publication 2017-10-09 Revision: 3.1 Seite/page 1/11 Technische Information / technical information Sanftanlauf-Modul sTT800N16P55 Soft starter Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage berlaststrom W1C sin.180 t = 21s I 800 A overload overload overload current Tvj=155C Tvjstart=40C Stostrom-Grenzwert T = 25C, t = 10ms I 6300 A vj P TSM surge current T = T , t = 10ms 5400 A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 198450 As vj P 145800 It-value Tvj = Tvj max, tP = 10ms As Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 250 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 800 A v max. 1,56 V vj vj max T T on-state voltage max. 0,9 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,83 m Ersatzwiderstand T = T r vj vj max T slope resistance Zndstrom T = 25C, v = 12V I max. 200 mA vj D GT gate trigger current Zndspannung T = 25C, v = 12V V max. 2 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1200 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom W1C T = T i + i max. 45 mA vj vj max D R forward off-state and reverse current W1C v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: JS date of publication: 2017-10-09 approved by: ML revision: 3.1 Date of Publication 2017-10-09 Revision: 3.1 Seite/page 2/11

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
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CYPRESS SEMI
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Cypress Semiconductor
Cypress Semiconductor Corp
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Infineon IR
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Infineon (IRF)
Infineon / Cypress
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INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
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International Rectifier HiRel Products
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IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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