VS-GT100DA120UF www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A FEATURES Trench IGBT high speed Square RBSOA HEXFRED low Q , low switching energy rr Positive V temperature coefficient CE(on) Fully isolated package Very low internal inductance ( 5 nH typical) SOT-227 Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 1200 V CES BENEFITS I DC 100 A at 108 C C Designed for increased operating efficiency in power V typical at 100 A, 25 C 1.93 V conversion: UPS, SMPS, welding, induction heating CE(on) Easy to assemble and parallel Speed 8 kHz to 30 kHz Direct mounting on heatsink Package SOT-227 Plug-in compatible with other SOT-227 packages Circuit configuration Single switch with AP diode Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V 1200 V CES T = 25 C 187 C Continuous collector current I C T = 90 C 123 C A Pulsed collector current I 240 CM Clamped inductive load current I 250 LM Gate to emitter voltage V 20 V GE T = 25 C 97 C Diode continuous forward current I F T = 90 C 61 A C Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 350 FSM J T = 25 C 890 C Power dissipation, IGBT P D T = 90 C 500 C W T = 25 C 429 C Power dissipation, diode P D T = 90 C 194 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Revision: 10-Sep-2019 Document Number: 96079 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GT100DA120UF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 3.8 mA 1200 - - BR(CES) GE C V = 15 V, I = 100 A - 1.93 2.55 GE C Collector to emitter voltage V V = 15 V, I = 100 A, T = 125 C - 2.26 - CE(on) GE C J V V = 15 V, I = 100 A, T = 150 C - 2.35 - GE C J V = V , I = 3.8 mA 4.5 5.8 7.0 CE GE C Gate threshold voltage V GE(th) V = V , I = 3.8 mA, T = 125 C - 4.6 - CE GE C J Temperature coefficient of threshold voltage V /T V = V , I = 3.8 mA (25 C to 125 C) - -12 - mV/C GE(th) J CE GE C V = 0 V, V = 1200 V - 1.0 100 A GE CE Collector to emitter leakage current I V = 0 V, V = 1200 V, T = 125 C - 0.9 - CES GE CE J mA V = 0 V, V = 1200 V, T = 150 C - 3.4 - GE CE J V = 0 V, I = 80 A - 2.8 3.5 GE F Forward voltage drop, diode V V = 0 V, I = 80 A, T = 125 C - 3.0 - V FM GE F J V = 0 V, I = 80 A, T = 150 C - 3.0 - GE F J Gate to emitter leakage current I V = 20 V - - 220 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q V = -15 V, V = +15 V - 800 - nC g GE GE Input capacitance C - 6150 - ies V = 25 V, V = 0 Vf = 1 MHz pF CE GE Reverse transfer capacitance C -345 - res Turn-on switching loss E -2.2 - on Turn-off switching loss E -3.0 - mJ off I = 75 A, C Total switching loss E V = 600 V, -5.2 - tot CC V = 15 V, GE Turn-on delay time t -131 - d(on) R = 1.0 g L = 500 H, Rise time t -55 - r ns T = 25 C J Turn-off delay time t -244 - d(off) Energy losses include tail and Fall time t -118 - f diode recovery -2.9 - Turn-on switching loss E on Diode used HFA16PB120 Turn-off switching loss E -5.3 - mJ off I = 75 A, C Total switching loss E V = 600 V, -8.2 - tot CC V = 15 V, GE Turn-on delay time t -147 - d(on) R = 1.0 g L = 500 H, Rise time t -61 - r ns T = 125 C J Turn-off delay time t -358 - d(off) Fall time t -132 - f Turn-on switching loss E -3.0 - on Turn-off switching loss E -4.0 - mJ off I = 100 A, C Energy losses Total switching loss E -7.0 - tot V = 600 V, CC include tail and V = 15 V, GE Turn-on delay time t diode recovery -134 - d(on) R = 1.0 g Diode used Rise time t L = 500 H, -66 - r HFA16PB120 ns T = 25 C J Turn-off delay time t -242 - d(off) Fall time t -108 - f Revision: 10-Sep-2019 Document Number: 96079 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000