VS-FC420SA10 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 420 A FEATURES I > 420 A, T = 25 C D C TrenchFET power MOSFET Low input capacitance (C iss) Reduced switching and conduction losses Ultra low gate charge (Q ) g Avalanche energy rated (U ) IS SOT-227 UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 100 V DSS R 1.3 m DS(on) (1) I 330 A at 90 C D Type Modules - MOSFET Package SOT-227 ABSOLUTE MAXIMUM RATINGS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS MOSFET Drain to source voltage V 100 V DSS T = 25 C 435 C Continuous drain current, V at 10 V I GS D T = 90 C 330 A C (1) Pulsed drain current I 1130 DM Power dissipation P T = 25 C 652 W D C Gate to source voltage V 20 V GS Single pulse avalanche energy E T = 25 C, L = 10 mH, V = 10 V 11 500 mJ AS C GS Single pulse avalanche current I T = 25 C, L = 10 mH, V = 10 V 48 A AS C GS MODULE Insulation voltage (RMS) V any terminal to case, t = 1 min 2500 V ISOL Operating junction temperature range T -55 to +175 C J Notes (1) Limited at maximum junction temperature Revision: 10-Sep-2019 Document Number: 95793 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-FC420SA10 www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T , T -55 - 175 C J Stg Junction to case MOSFET R - - 0.23 thJC C/W Case to heat sink Module R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage V V = 0 V, I = 750 A 100 - - V (BR)DSS GS D Static drain to source on-resistance R V = 10 V, I = 200 A - 1.3 2.15 m DS(on) GS D Gate threshold voltage V V = V , I = 750 A 2.2 2.9 3.8 V GS(th) DS GS D Forward transconductance g V = 20 V, I = 20 A, V = 10 V - 94 - S fs DS D GS V = 100 V, V = 0 V - 0.6 4 DS GS Drain to source leakage current I A DSS V = 100 V, V = 0 V, T = 125 C - 32 - DS GS J Gate to source leakage I V = 20 V - - 350 nA GSS GS Total gate charge Q - 375 - g I = 200 A D Gate to source charge Q V = 50 V -84 - nC gs DS V = 10 V GS Gate to drain (Miller) charge Q - 138 - gd Turn-on delay time t -45 - d(on) V = 50 V DD Rise time t - 275 - r I = 100 A D ns R = 1.2 Turn-off delay time t g - 152 - d(off) V = 10 V GS Fall time t - 172 - f Input capacitance C - 17.3 - iss V = 0 V GS Output capacitance C V = 25 V -9.2 - nF oss DS f = 1 MHz Reverse transfer capacitance C -0.9 - rss SOURCE-DRAIN RATINGS AND CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Continuous source current (body diode) I - - 435 S D MOSFET symbol showing the integral A reverse p-n junction G diode Pulsed source current (body diode) I - - 1130 SM S Diode forward voltage V I = 200 A, V = 0 V - 0.91 1.5 V SD S GS Reverse recovery time t - 171 - ns rr T = 25 C, I = I = 50 A, J F S Reverse recovery charge Q - 740 - nC rr dI/dt = 100 A/s, V = 50 V R Reverse recovery current I -8.7 - A RM Revision: 10-Sep-2019 Document Number: 95793 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000