VS-FC420SA15 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 400 A FEATURES I = 400 A, T = 25 C D C ThunderFET Power MOSFET Excellent gate charge x R product (FOM) DS(on) Reduced switching and conduction losses Ultra low gate charge (Q ) g Maximum 175 C junction temperature UL approved file E78996 SOT-227 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS DC/DC conversions V 150 V DSS Motor drives R at 200 A 1.93 m DS(on) I 300 A at 90 C DC/AC inverter D Type Modules - MOSFET Power supplies Package SOT-227 - Uninterruptible power supplies - AC/DC switch-mode power supplies ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS MOSFET Drain to source voltage V 150 V DSS T = 25 C 400 C Continuous drain current, V 10 V I GS at D T = 90 C 300 A C (1) Pulsed drain current I 860 DM Power dissipation P T = 25 C 909 W D C Gate to source voltage V 20 V GS Single pulse avalanche current E 720 J AS Avalanche current I T = 25 C, L = 10 mH, V = 10 V 120 A AS C GS MODULE Operating junction temperature range T -55 to +175 J C Operating storage temperature range T -40 to +150 Stg Insulation voltage (RMS) V any terminal to case, t = 1 min 2500 V ISOL Note (1) Limited at max. junction temperature Revision: 18-Nov-2020 Document Number: 96060 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-FC420SA15 www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Operating junction temperature range T -55 - 175 J C Operating storage temperature range T -40 - 150 Stg Junction to case MOSFET R - - 0.165 thJC C/W Case to heatsink Module R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf. in) Mounting torque Torque to heatsink - - 1.3 (11.5) Nm (lbf. in) Case style SOT-227 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage V V = 0 V, I = 500 A 150 - - V (BR)DSS GS D Breakdown voltage temperature coefficient V /T Reference to 25 C, I = 1.0 mA - 9.0 - mV/C (BR)DSS J D Static drain to source on-resistance R V = 10 V, I = 200 A - 1.93 2.75 m DS(on) GS D Gate threshold voltage V V = V , I = 1.0 mA 1.80 3.46 5.4 V GS(th) DS GS D V = V , I = 1.0 mA DS GS D Temperature coefficient of threshold voltage V /T -9.6 - mV/C GE(th) J (25 C to 125 C) Forward transconductance g V = 15 V, I = 100 A, V = 10 V - 200 - S fs DS D GS V = 150 V, V = 0 V - 0.5 10.0 DS GS Drain to source leakage current I A DSS V = 150 V, V = 0 V, T = 150 C - 19 - DS GS J Gate to source leakage I V = 20 V - - 200 nA GSS GS Total gate charge Q -250 - g I = 250 A D Gate to source charge Q V = 75 V -79 - nC gs DS V = 10 V GS Gate to drain Mille) charge Q -82 - gd Turn-on delay time t -139 - d(on) V = 75 V DD Rise time t -285 - r I = 100 A D ns R = 1 g Turn-off delay time t -120 - d(off) V = 10 V GS Fall time t -142 - f Input capacitance C - 13.7 - iss V = 0 V GS Output capacitance C V = 25 V -2.2 - nF oss DS f = 1 MHz Reverse transfer capacitance C - 0.104 - rss SOURCE-DRAIN RATINGS AND CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Continuous source current (body diode) I - - 476 S MOSFET symbol D showing the A integral reverse Pulsed source current (body diode) I - - 850 SM G p-n junction diode S Diode forward voltage V I = 250 A, V = 0 V - 0.95 - V SD S GS Reverse recovery time t - 171 - ns rr T = 25 C, I = I = 50 A, J F S Reverse recovery charge Q - 1032 - nC rr dI/dt = 100 A/s, V = 50 V R Reverse recovery current I -12 - A RM Revision: 18-Nov-2020 Document Number: 96060 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000