VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 V ) AC/RMS Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 SOT-227 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 600 V CES BENEFITS V (typical) 1.92 V CE(on) Designed for increased operating efficiency in power V 15 V conversion: UPS, SMPS, welding, induction heating GE I 100 A C Lower overall losses available at frequencies = 20 kHz Speed 8 kHz to 30 kHz Easy to assemble and parallel Package SOT-227 Direct mounting to heatsink Circuit configuration Single switch no diode Lower EMI, requires less snubbing Plug-in compatible with other SOT-227 packages ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Collector to emitter breakdown voltage V 600 V CES T = 25 C 200 C Continuous collector current I C T = 100 C 100 C A Pulsed collector current I 400 CM V = 80 % (V ), V = 20 V, L = 10 H, CC CES GE Clamped inductive load current I 400 LM R = 2.0 , see fig. 13a g Gate to emitter voltage V 20 V GE Repetitive rating pulse width limited by Reverse voltage avalanche energy E 160 mJ ARV maximum junction temperature RMS isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL T = 25 C 500 C Maximum power dissipation P W D T = 100 C 200 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Mounting torque 6-32 or M3 screw 1.3 (12) Nm (lbf.in) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T , T -55 - 150 J Stg Thermal resistance, junction to case R - - 0.25 C/W thJC Thermal resistance case to heatsink R Flat, greased, surface - 0.05 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 23-Oct-17 Document Number: 94364 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-GA200SA60UP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 250 A 600 - - (BR)CES GE C V V = 0 V, I = 1.0 A GE C Emitter to collector breakdown voltage V 18 - - (BR)ECS Pulse width 80 s duty factor 0.1 % Temperature coefficient of breakdown V / T V = 0 V, I = 10 mA - 0.38 - V/C (BR)CES J GE C voltage I = 100 A - 1.60 1.9 C V = 15 V GE Collector to emitter saturation voltage V I = 200 A - 1.92 - CE(on) C See fig. 2, 5 V I = 100 A, T = 150 C - 1.54 - C J Gate threshold voltage V V = V , I = 250 A 3.0 - 6.0 GE(th) CE GE C Temperature coefficient of threshold voltage V /T V = V , I = 2.0 mA - -11 - mV/C GE(th) J CE GE C V = 100 V, I = 100 A CE C Forward transconductance g 79 - - S fe Pulse width 5.0 s, single shot V = 0 V, V = 600 V - - 1.0 GE CE Zero gate voltage collector current I mA CES V = 0 V, V = 600 V, T = 150 C - - 10 GE CE J Gate to emitter leakage current I V = 20 V - - 250 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q I = 100 A - 770 1200 g C Gate-emitter charge (turn-on) Q V = 400 V - 100 150 nC ge CC V = 15 V See fig. 8 Gate-collector charge (turn-on) Q GE - 260 380 gc Turn-on delay time t -54 - d(on) T = 25 C J Rise time t -79 - r I = 100 A C ns Turn-off delay time t - 130 200 d(off) V = 480 V CC Fall time t - 300 450 f V = 15 V GE Turn-on switching loss E R = 2.0 -0.98 - on g Energy losses include tail Turn-off switching loss E -3.48 - mJ off See fig. 9, 10, 14 Total switching loss E - 4.46 7.6 ts Turn-on delay time t -56 - d(on) T = 150 C J Rise time t -75 - r I = 100 A, V = 480 V C CC ns Turn-off delay time t - 160 - d(off) V = 15 V, R = 2.0 GE g Fall time t Energy losses include tail - 460 - f See fig. 10, 11, 14 Total switching loss E -7.24 - mJ ts Internal emitter inductance L Measured 5 mm from package - 5.0 - nH E Input capacitance C - 16 500 - ies V = 0 V GE Output capacitance C V = 30 V - 1000 - pF oes CC f = 1.0 MHz See fig. 7 Reverse transfer capacitance C - 200 - res Revision: 23-Oct-17 Document Number: 94364 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000