VS-GB50LA120UX www.vishay.com Vishay SemiconductorsLow Side Choppe IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive V temperature coefficient CE(on) Fully isolated package SOT-227 Speed 8 kHz to 60 kHz Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: For definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 V 1200 V CES BENEFITS I DC 50 A at 92 C C Designed for increased operating efficiency in power V typical at 50 A, 25 C 3.22 V CE(on) conversion: UPS, SMPS, welding, induction heating Package SOT-227 Easy to assemble and parallel Circuit Chopper low side switch Direct mounting on heatsink Plug-in compatible with other SOT-227 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 1200 V CES T = 25 C 84 C Continuous collector current I C T = 80 C 57 C Pulsed collector current I 150 CM A Clamped inductive load current I 150 LM T = 25 C 76 C Diode continuous forward current I F T = 80 C 52 C Gate to emitter voltage V 20 V GE T = 25 C 431 C Power dissipation, IGBT P D T = 80 C 242 C W T = 25 C 278 C Power dissipation, diode P D T = 80 C 156 C RMS isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Revision: 30-Jul-13 Document Number: 93102 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GB50LA120UX www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown V V = 0 V, I = 1 mA 1200 - - BR(CES) GE C voltage V = 15 V, I = 25 A - 2.46 - GE C V = 15 V, I = 50 A - 3.22 2.80 GE C V Collector to emitter voltage V CE(on) V = 15 V, I = 25 A, T = 125 C - 2.84 3.60 GE C J V = 15 V, I = 50 A, T = 125 C - 3.78 3.00 GE C J Gate threshold voltage V V = V , I = 500 A 4 5 4 GE(th) CE GE C Temperature coefficient of V /T V = V , I = 1 mA (25 C to 125 C) - - 10 - mV/C GE(th) J CE GE C threshold voltage V = 0 V, V = 1200 V - 6 50 A GE CE Collector to emitter leakage current I CES V = 0 V, V = 1200 V, T = 125 C - 0.7 2.0 mA GE CE J Diode reverse breakdown voltage V I = 1 mA 1200 - - V BR R I = 25 A, V = 0 V - 1.99 2.42 C GE I = 50 A, V = 0 V - 2.53 3.00 C GE V Diode forward voltage drop V FM I = 25 A, V = 0 V, T = 125 C - 1.96 2.30 C GE J I = 50 A, V = 0 V, T = 125 C - 2.66 3.08 C GE J V = V rated - 4 50 A R R Diode reverse leakage current I RM T = 125 C, V = V rated - 0.6 3.0 mA J R R Gate to emitter leakage current I V = 20 V - - 200 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 400 - g Gate to emitter charge (turn-on) Q I = 50 A, V = 600 V, V = 15 V -43 - nC ge C CC GE Gate to collector charge (turn-on) Q - 187 - gc Turn-on switching loss E -2.72- on I = 50 A, V = 600 V, C CC Turn-off switching loss E V = 15 V, R = 5 -1.11- off GE g L = 500 H, T = 25 C J Total switching loss E -3.83- tot mJ Turn-on switching loss E -3.94- on Energy losses Turn-off switching loss E -2.31- off include tail and diode recovery -6.25- Total switching loss E tot I = 50 A, V = 600 V, C CC (see fig. 18) Turn-on delay time t V = 15 V, R = 5 - 191 - d(on) GE g L = 500 H, T = 125 C J Rise time t -53 - r ns Turn-off delay time t - 223 - d(off) Fall time t - 143 - f T = 150 C, I = 150 A, R = 22 J C g Reverse bias safe operating area RBSOA V = 15 V to 0 V, V = 900 V, Fullsquare GE CC V = 1200 V P Diode reverse recovery time t - 129 161 ns rr Diode peak reverse current I I = 50 A, dI /dt = 200 A/s, V = 200 V -11 14 A rr F F R Diode recovery charge Q - 700 1046 nC rr Diode reverse recovery time t - 208 257 ns rr I = 50 A, dI /dt = 200 A/s, F F Diode peak reverse current I -17 21 A rr V = 200 V, T = 125 C R J Diode recovery charge Q - 1768 2698 nC rr Revision: 30-Jul-13 Document Number: 93102 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000