VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED anti-parallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nH typical) SOT-227 Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V 600 V CES I DC 90 A at 90 C C BENEFITS V typical at 100 A, 25 C 2.40 V CE(on) Designed for increased operating efficiency in power I DC 108 A at 90 C F conversion: UPS, SMPS, welding, induction heating Speed 8 kHz to 30 kHz Easy to assemble and parallel Package SOT-227 Direct mounting to heatsink Circuit configuration Single switch with AP diode Plug-in compatible with other SOT-227 packages Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 147 C Continuous collector current I C T = 90 C 90 C Pulsed collector current I 300 CM A Clamped inductive load current I 300 LM T = 25 C 180 C Diode continuous forward current I F T = 90 C 108 C Gate-to-emitter voltage V 20 V GE T = 25 C 625 C Power dissipation, IGBT P D T = 90 C 300 C W T = 25 C 379 C Power dissipation, diode P D T = 90 C 182 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Revision: 23-Oct-17 Document Number: 94771 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GB90DA60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown V V = 0 V, I = 250 A 600 - - BR(CES) GE C voltage V = 15 V, I = 100 A - 2.4 2.8 GE C Collector to emitter voltage V V = 15 V, I = 100 A, T = 125 C - 3 3.4 CE(on) GE C J V V = 15 V, I = 100 A, T = 150C - 3.3 - GE C J V = V , I = 250 A 3 3.9 5.0 CE GE C Gate threshold voltage V GE(th) V = V , I = 250 A, T = 125 C - 2.5 - CE GE C J Temperature coefficient of threshold V / T V = V , I = 1 mA (25 C to 125 C) - -10 - mV/C GE(th) J CE GE C voltage V = 0 V, V = 600 V - 7 100 A GE CE Collector to emitter leakage current I V = 0 V, V = 600 V, T = 125 C - 1.5 6.0 CES GE CE J mA V = 0 V, V = 600 V, T = 150 C - 6 10 GE CE J I = 100 A, V = 0 V - 1.6 2.1 C GE Forward voltage drop, diode V I = 100 A, V = 0 V, T = 125 C - 1.56 2.0 V FM C GE J I = 100 A, V = 0 V, T = 150 C - 1.53 - C GE J Gate to emitter leakage current I V = 20 V - - 200 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 460 690 g Gate to emitter charge (turn-on) Q I = 100 A, V = 480 V, V = 15 V - 160 250 nC ge C CC GE Gate to collector charge (turn-on) Q - 70 130 gc Turn-on switching loss E -0.39 - on Turn-off switching loss E -1.10 - mJ off Total switching loss E -1.49 - tot I = 100 A, V = 360 V, C CC Turn-on delay time t V = 15 V, R = 5 - 245 - d(on) GE g L = 500 H, T = 25 C J Rise time t -53- r ns Energy losses Turn-off delay time t - 240 - d(off) include tail and Fall time t -63- f diode recovery. Turn-on switching loss E -0.52 - on Diode used Turn-off switching loss E -1.24 - mJ off 60APH06 Total switching loss E -1.76 - tot I = 100 A, V = 360 V, C CC Turn-on delay time t V = 15 V, R = 5 - 240 - d(on) GE g L = 500 H, T = 125 C J Rise time t -54- r ns Turn-off delay time t - 250 - d(off) Fall time t -80- f T = 150 C, I = 300 A, R = 22 J C g Reverse bias safe operating area RBSOA V = 15 V to 0 V, V = 400 V, Fullsquare GE CC V = 600 V, L = 500 H P Diode reverse recovery time t -95- ns rr Diode peak reverse current I I = 50 A, dI /dt = 200 A/s, V = 200 V -10- A rr F F R Diode recovery charge Q - 480 - nC rr Diode reverse recovery time t - 144 - ns rr I = 50 A, dI /dt = 200 A/s, F F Diode peak reverse current I -16- A rr V = 200 V, T = 125 C R J Diode recovery charge Q - 1136 - nC rr Revision: 23-Oct-17 Document Number: 94771 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000