SGB02N120 Fast IGBT in NPT-technology C Lower E compared to previous generation off Short circuit withstand time 10 s Designed for: G E - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : SGB02N120 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 2.0 K/W thJC junction case Thermal resistance, R 40 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V 1200 - - V (BR)CES V =0V, I =100A GE C Collector-emitter saturation voltage V V = 15V, I =2A CE(sat) GE C 2.5 3.1 3.6 T =25C j - 3.7 4.3 T =150C j Gate-emitter threshold voltage V 3 4 5 I =100A,V =V GE(th) C CE GE Zero gate voltage collector current I V =1200V,V =0V A CES CE GE T =25C - - 25 j - - 100 T =150C j I V =0V,V =20V Gate-emitter leakage current - - 100 nA GES CE GE g V =20V, I =2A Transconductance 1.5 - S fs CE C Dynamic Characteristic C V =25V, Input capacitance - 205 250 pF iss CE C V =0V, Output capacitance GE - 20 25 oss f=1MHz Reverse transfer capacitance C - 12 14 rss Q V =960V, I =2A Gate charge - 11 - nC Gate CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 2) I Short circuit collector current V =15V,t 10s - 24 - A C(SC) GE SC 100VV 1200V, CC T 150C j 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2 3 Jan 07 Power Semiconductors