SGB02N60 Fast IGBT in NPT-technology C 75% lower E compared to previous generation off combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability (TO-263AB) 2 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : SGB02N60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 4.2 K/W thJC junction case Thermal resistance, R 40 thJA 1) junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V 600 - - V (BR)CES V =0V, I =500A GE C Collector-emitter saturation voltage V V = 15V, I =2A CE(sat) GE C 1.7 1.9 2.4 T =25C j - 2.2 2.7 T =150C j Gate-emitter threshold voltage V 3 4 5 I =150A,V =V GE(th) C CE GE Zero gate voltage collector current I V =600V,V =0V A CES CE GE T =25C - - 20 j - - 250 T =150C j I V =0V,V =20V Gate-emitter leakage current - - 100 nA GES CE GE g V =20V, I =2A Transconductance - 1.6 - S fs CE C Dynamic Characteristic C V =25V, Input capacitance - 142 170 pF iss CE C V =0V, Output capacitance GE - 18 22 oss f=1MHz Reverse transfer capacitance C - 10 12 rss Q V =480V, I =2A Gate charge - 14 18 nC Gate CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 2) I Short circuit collector current V =15V,t 10s - 20 - A C(SC) GE SC V 600V, CC T 150C j 1) 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.3 Nov 06