CPV363M4KPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) FEATURES Short circuit rated ultrafast: optimized for high speed (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 s at 125 C, V = 15 V GE Fully isolated printed circuit board mount package Switching-loss rating includes all tail losses IMS-2 HEXFRED soft ultrafast diodes UL approved file E78996 Designed and qualified for industrial level PRODUCT SUMMARY Material categorization: for definitions of compliance OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE please see www.vishay.com/doc 99912 V 600 V CES DESCRIPTION I per phase (1.94 kW total) RMS 6.7 A RMS with T = 90 C C The IGBT technology is the key to Vishays Semiconductors T 125 C J advanced line of IMS (Insulated Metal Substrate) power Supply voltage 360 V DC modules. These modules are more efficient than Power factor 0.8 comparable bipolar transistor modules, while at the same Modulation depth (see fig. 1) 115 % time having the simpler gate-drive requirements of the V (typical) familiar power MOSFET. This superior technology has now CE(on) 1.72 V at I = 6.0 A, 25 C C been coupled to a state of the art materials system that Speed 8 kHz to 30 kHz maximizes power throughput with low thermal resistance. Package SIP This package is highly suited to motor drive applications and Circuit Three phase inverter where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 11 C Continuous collector current, each IGBT I A C T = 100 C 6.0 C Repetitive rating V = 20 V, pulse width GE Pulsed collector current I limited by maximum junction temperature 22 A CM See fig. 20 V = 80 % (V ), V = 20 V, CC CES GE Clamped inductive load current I L = 10 H, R = 22 22 A LM G See fig. 19 T = 100 C 6.1 A Diode continuous forward current I F C Diode maximum forward current I 22 A FM Short circuit withstand time t 10 s SC Gate to emitter voltage V 20 V GE Isolation voltage V Any terminal to case, t = 1 minute 2500 V ISOL RMS T = 25 C 36 C Maximum power dissipation, each IGBT P W D T = 100 C 14 C Operating junction and T , T -40 to +150 J Stg storage temperature range C Soldering temperature For 10 s, (0.063 (1.6 mm) from case) 300 5 to 7 lbf in Mounting torque 6-32 or M3 screw (N m) (0.55 to 0.8) Revision: 10-Jun-15 Document Number: 94485 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000CPV363M4KPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTYP. MAX. UNITS Junction to case, each IGBT, one IGBT in conduction R (IGBT) - 3.5 thJC Junction to case, each DIODE, one DIODE in conduction R (DIODE) - 5.5 C/W thJC Case to sink, flat, greased surface R (MODULE) 0.10 - thCS 20 - g Weight of module 0.7 - oz. ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS (1) Collector to emitter breakdown voltage V V = 0 V, I = 250 A 600 - - V (BR)CES GE C Temperature coeff. of breakdown voltage V T V = 0 V, I = 1.0 mA - 0.45 - V/C (BR)CES J GE C I = 6.0 A - 1.72 2.10 C I = 11 A V = 15 V - 2.00 - C GE Collector to emitter saturation voltage V CE(on) See fig. 2, 5 V - - I = 6.0 A, T = 150 C 1.60 C J Gate threshold voltage V 3.0 - 6.0 GE(th) V = V , I = 250 A CE GE C Temperature coeff. of threshold voltage V /T -- 13 - mV/C GE(th) J (2) Forward transconductance g V = 100 V, I = 12 A 3.0 6.0 - S fe CE C -- V = 0 V, V = 600 V 250 GE CE Zero gate voltage collector current I A CES V = 0 V, V = 600 V, T = 150 C - - 2500 GE CE J I = 12 A -1.4 1.7 C Diode forward voltage drop V See fig. 13 V FM I = 12 A, T = 150 C - 1.3 1.6 C J Gate to emitter leakage current I V = 20 V - - 100 nA GES GE Notes (1) Pulse width 80 s, duty factor 0.1 % (2) Pulse width 5.0 s single shot Revision: 10-Jun-15 Document Number: 94485 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000