VS-E4PU3006LHN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 30 A FRED Pt Gen 4 FEATURES Base cathode Gen 4 FRED Pt technology 2 Low I and reverse recovery charge RRM Very low forward voltage drop 2 1 Polyimide passivated chip for high reliability standard 1 3 3 Anode 175 C operating junction temperature Cathode TO-247AD 2L AEC-Q101 qualified, meets JESD 201 class 1 whisker test Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package TO-247AD 2L DESCRIPTION I 30 A F(AV) Gen 4 Fred technology, state of the art, ultralow V , soft F V 600 V R switching optimized for Discontinuous (Critical) Mode (DCM) V at I 1.19 V F F and IGBT F/W diode. t typ. see Recovery table rr The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and T max. 175 C J reduce over dissipation in the switching element and Diode variation Single die snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 131 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C, t = 8.3 ms half sine wave 240 FSM C p Operating junction and storage temperature T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 30 A - 1.36 1.6 F I = 60 A - 1.6 - F I = 30 A, T = 125 C - 1.23 - V F J Forward voltage V F I = 60 A, T = 125 C - 1.5 - F J I = 30 A, T = 150 C - 1.19 1.35 F J = 60 A, T = 150 C - 1.48 - I F J V = V rated - - 50 R R Reverse leakage current I A R T = 125 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 18.3 - pF T R Revision: 19-Jan-17 Document Number: 95929 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-E4PU3006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C -65- J Reverse recovery time t ns rr T = 125 C - 90 - J I = 30 A F T = 25 C - 18 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 32 - J V = 400 V R T = 25 C - 850 - J Reverse recovery charge Q nC rr T = 125 C - 1850 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case R --1C/W thJC Thermal resistance, case to heatsink R -0.4 - thCS -6.0 - g Weight -0.21- oz. 6.0 12 kgf cm Mounting torque - (5) (10) (lbf in) Marking device Case style TO-247AD 2L E4PU3006LH 1000 1000 175 C 100 150 C 125 C 100 10 1 T = 175 C J 25 C 10 0.1 T = 150 C J 0.01 T = 125 C J T = 25 C J 1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 V -Forward Voltage Drop (V) F V - Reverse Voltage (V) R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 100 10 0 100 200 300 400 500 600 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 19-Jan-17 Document Number: 95929 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F C - Junction Capacitance (pF) T I - Reverse Current (A) R