VS-E5TX3012-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt G5 FEATURES Base cathode Hyperfast and optimized Q 2 rr 2 Best in class forward voltage drop and switching losses trade off Optimized for high speed operation 1 175 C maximum operating junction temperature 1 3 3 Polyimide passivation Cathode Anode TO-220AC 2L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS I 30 A F(AV) Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for high V 1200 V R frequency converters, both soft switched / resonant. V at I at 125 C 2.1 V F F Specifically designed to improve efficiency of PFC and t 26 ns rr output rectification stages of EV / HEV battery charging T max. 175 C stations, booster stage of solar inverters and UPS J applications, these devices are perfectly matched to Package TO-220AC 2L operate with MOSFETs or high speed IGBTs. Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Repetitive peak reverse voltage V 1200 V RRM Average rectified forward current I T = 90 C, D = 0.50 30 F(AV) C Non-repetitive peak surge current I T = 45 C, t = 10 ms, sine wave 210 A FSM C p Repetitive peak forward current I T = 90 C, D = 0.50, f = 20 kHz 60 FRM C Operating junction and storage temperature T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS V , BR Breakdown voltage, blocking voltage I = 100 A 1200 - - R V R V I = 30 A - 2.6 3.15 F Forward voltage V F I = 30 A, T = 125 C - 2.1 - F J V = V rated - - 50 R R Reverse leakage current I A R T = 125 C, V = V rated - - 500 J R R Junction capacitance C V = 200 V - 17 - pF T R Series inductance L Measured to lead 5 mm from package body - 8 - nH S Revision: 05-Feb-2021 Document Number: 96507 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-E5TX3012-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 26 - F F R Reverse recovery time t T = 25 C - 100 - ns rr J T = 125 C - 150 - J I = 20 A F T = 25 C - 12 - J Peak recovery current I dI /dt = 600 A/s A RRM F T = 125 C - 22 - J V = 400 V R T = 25 C - 530 - J Reverse recovery charge Q nC rr T = 125 C - 1550 - J T = 25 C -80 - J Reverse recovery time t ns rr T = 125 C - 120 - J I = 30 A F T = 25 C - 22 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 37 - J V = 800 V R T = 25 C - 900 - J Reverse recovery charge Q nC rr T = 125 C - 2300 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Thermal resistance, junction-to-case R --1.2C/W thJC -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Maximum junction and storage temperature range T , T -55 - 175 C J Stg Marking device Case style: 2L TO-220AC E5TX3012 100 1000 T = 175 C J 100 10 T = 175C J T = 125 C J 10 T = 125C J 1 T = 25C J T = 25 C J 1 0.1 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 05-Feb-2021 Document Number: 96507 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R