333 3 VS-EPH3007L-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base cathode Low forward voltage drop 2 Hyperfast soft recovery time 175 C operating junction temperature 2 Material categorization: 1 for definitions of compliance please see 1 3 www.vishay.com/doc 99912 Cathode Anode 3 TO-247AD 2L VS-EPH3007L-N3 DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized LINKS TO ADDITIONAL RESOURCES performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control 3D Models guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in PRIMARY CHARACTERISTICS the AC/DC section of SMPS, inverters or as freewheeling I 30 A F(AV) diodes. V 650 V R The extremely optimized stored charge and low recovery V at I 1.4 V F F current minimize the switching losses and reduce over t typ. 33 ns dissipation in the switching element and snubbers. rr T max. 175 C J MECHANICAL DATA Package TO-247AD 2L Case: TO-247AD 2L Circuit configuration Single Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 650 V RRM Average rectified forward current I T = 113 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C, t = 8.3 ms, half sine wave 195 FSM C p Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 650 - - BR R R I = 30 A - 1.8 2.1 V F Forward voltage V F I = 30 A, T = 150 C - 1.4 1.6 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 300 J R R Junction capacitance C V = 650 V - 22 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 21-Jan-2021 Document Number: 96447 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-EPH3007L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 37 - F F R Reverse recovery time t T = 25 C -33- ns rr J T = 125 C - 88 - J I = 30 A F T = 25 C - 18 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 30 - J V = 400 V R T = 25 C - 450 - J Reverse recovery charge Q nC rr T = 125 C - 1350 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, junction to case R -0.71.1C/W thJC Thermal resistance, case to heatsink R Mounting surface, flat, smooth, and greased - 0.5 - thCS -5.5 - g Weight -0.2 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Marking device Case style TO-247 2L EPH3007L 100 1000 175 C 100 150 C 10 10 T = 175 C J 1 1 0.1 25 C 0.01 T = 150 C J T = 25 C J 0.1 0.001 0 0.5 1.01.5 2.02.5 0 100 200300 400500 600700 V - Forward Voltage Drop (V) V (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Jan-2021 Document Number: 96447 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I (A) RM