VS-EPU6006L-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Cathode to base 2 175 C operating junction temperature Designed and qualified according to 2 commercial qualification 1 Material categorization: for definitions of compliance please see 1 3 3 Cathode Anode www.vishay.com/doc 99912 TO-247AD 2L DESCRIPTION / APPLICATIONS VS-EPU60... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward PRODUCT SUMMARY voltage drop and ultrafast recovery time. Package TO-247AD 2L The planar structure and the platinum doped life time control I 60 A F(AV) guarantee the best overall performance, ruggedness and V 600 V reliability characteristics. R V at I 1.05 V These devices are intended for use in the output rectification F F stage of SMPS, welding, UPS, DC/DC converters as well as t typ. 32 ns rr freewheeling diodes in low voltage inverters and chopper T max. 175 C J motor drives. Diode variation Single die Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current in DC I T = 116 C 60 F(AV) C A Single pulse forward current I T = 25 C, t = 8.3 ms half sine wave 600 FSM C p Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R I = 60 A - 1.2 1.5 F V Forward voltage V I = 60 A, T = 125 C - 1.1 1.3 F F J I = 60 A, T = 175 C - 1.05 1.2 F J V = V rated - 0.2 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 200 J R R Junction capacitance C V = 600 V - 38 - pF T R Revision: 23-Jan-17 Document Number: 95944 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-EPU6006L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 200 A/s, V = 30 V - 32 - F F R Reverse recovery time t T = 25 C - 110 - ns rr J T = 125 C - 200 - J I = 60 A F T = 25 C - 10 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 19 - J V = 200 V R T = 25 C - 530 - J Reverse recovery charge Q nC rr T = 125 C - 1900 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -55 - 175 C J Stg storage temperature range Thermal resistance, R --0.65 thJC junction to case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heat sink and greased -6 - g Weight -0.21 - oz. 6 1.2 kgf. cm Mounting torque - (5) (10) (lbf in) Marking device Case style TO-247AD 2L EPU6006L Revision: 23-Jan-17 Document Number: 95944 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000