VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A FEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al O substrate with low thermal resistance 2 3 Short circuit rated Square RBSOA Integrated thermistor Low internal inductances EMIPAK 2B Low switching loss (package example) PressFit pins locking technology. Patent US.263.820 B2 PRIMARY CHARACTERISTICS UL approved file E78996 Q1 - Q4 IGBT STAGE Material categorization: for definitions of compliance V 600 V CES please see www.vishay.com/doc 99912 V typical at I = 75 A 1.7 V CE(on) C I at T = 89 C 75 A C C DESCRIPTION Q2 - Q3 IGBT STAGE VS-ETF075Y60U is an integrated solution for a multi level V 600 V CES inverter stage in a single package. The EMIPAK2B package V typical at I = 75 A 1.56 V CE(on) C is easy to use thanks to the PressFit pins and the exposed I at T = 122 C 75 A C C substrate provides improved thermal performance. The Speed 8 kHz to 30 kHz optimized layout also helps to minimize stray parameters, Package EMIPAK 2B allowing for better EMI performance. Circuit configuration 3-levels half bridge inverter stage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Operating junction temperature T 175 J C Storage temperature range T -40 to +150 Stg RMS isolation voltage V T = 25 C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V ISOL J Q1 - Q4 IGBT Collector to emitter voltage V 600 CES V Gate to emitter voltage V 20 GES Pulsed collector current I 200 CM A (1) Clamped inductive load current I 200 LM T = 25 C 109 C Continuous collector current I T = 80 C 80 A C C T = 80 C 40 SINK T = 25 C 294 C Power dissipation P W D T = 80 C 186 C Q2 - Q3 IGBT Collector to emitter voltage V 600 CES V Gate to emitter voltage V 20 GES Pulsed collector current I 250 CM A (1) Clamped inductive load current I 250 LM T = 25 C 154 C Continuous collector current I T = 80 C 113 A C C T = 80 C 50 SINK T = 25 C 405 C Power dissipation P W D T = 80 C 257 C PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Revision: 06-Oct-17 Document Number: 94685 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage V 600 V RRM Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 270 FSM J T = 25 C 78 C A Diode continuous forward current I T = 80 C 55 F C T = 80 C 28 SINK T = 25 C 174 C Power dissipation P W D T = 80 C 110 C D1 - D2 - D3 - D4 AP DIODE Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 250 FSM J T = 25 C 72 C A Diode continuous forward current I T = 80 C 70 F C T = 80 C 31 SINK T = 25 C 107 C Power dissipation P W D T = 80 C 68 C Notes Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur (1) V = 300 V, V = 15 V, L = 500 H, R = 4.7 , T = 175 C CC GE g J ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q1 - Q4 IGBT Collector to emitter breakdown voltage BV V = 0 V, I = 100 A 600 - - V CES GE C V = 15 V, I = 60 A - 1.57 1.8 GE C V = 15 V, I = 75 A - 1.7 1.93 GE C Collector to emitter voltage V CE(on) V = 15 V, I = 60 A, T = 125 C - 1.7 - V GE C J V = 15 V, I = 75 A, T = 125 C - 1.86 - GE C J Gate threshold voltage V V = V , I = 2.1 mA 3.6 5.6 7.1 GE(th) CE GE C Temperature coefficient of threshold V /T V = V , I = 1 mA (25 C to 125 C) - -12 - mV/C GE(th) J CE GE C voltage Forward transconductance g V = 20 V, I = 75 A - 51 - S fe CE C Transfer characteristics V V = 20 V, I = 75 A - 9.6 - V GE CE C V = 0 V, V = 600 V - 0.0002 0.1 GE CE Zero gate voltage collector current I mA CES V = 0 V, V = 600 V, T = 125 C - 0.01 - GE CE J Gate to emitter leakage current I V = 20 V, V = 0 V - - 200 nA GES GE CE Q2 - Q3 IGBT Collector to emitter breakdown voltage BV V = 0 V, I = 500 A 600 - - V CES GE C V = 15 V, I = 60 A - 1.45 1.62 GE C V = 15 V, I = 75 A - 1.56 1.73 GE C Collector to emitter voltage V CE(on) V = 15 V, I = 60 A, T = 125 C - 1.52 - V GE C J V = 15 V, I = 75 A, T = 125 C - 1.67 - GE C J Gate threshold voltage V V = V , I = 5.6 mA 3.6 5.3 7.1 GE(th) CE GE C Temperature coefficient of threshold V /T V = V , I = 1.4 mA (25 C to 125 C) - -18 - mV/C GE(th) J CE GE C voltage Forward transconductance g V = 20 V, I = 75 A - 72 - S fe CE C Transfer characteristics V V = 20 V, I = 75 A - 8.3 - V GE CE C V = 0 V, V = 600 V - 0.0005 0.1 GE CE Zero gate voltage collector current I mA CES V = 0 V, V = 600 V, T = 125 C - 0.065 - GE CE J Gate to emitter leakage current I V = 20 V, V = 0 V - - 400 nA GES GE CE Revision: 06-Oct-17 Document Number: 94685 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000