VS-ETH1506S-M3, VS-ETH1506-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current Designed and qualified according to 2 TO-263AB (D PAK) TO-262AA JEDEC -JESD 47 Base Material categorization: cathode for definitions of compliance please see 2 2 www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized 3 1 3 1 N/C Anode N/C Anode performance of forward voltage drop, hyperfast recovery time, and soft recovery. VS-ETH1506S-M3 VS-ETH1506-1-M3 The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY These devices are intended for use in PFC Boost stage in 2 Package TO-263AB (D PAK), TO-262AA the AC/DC section of SMPS, inverters or as freewheeling I 15 A F(AV) diodes. V 600 V R The extremely optimized stored charge and low recovery V at I 1.25 V F F current minimize the switching losses and reduce over t (typ.) 21 ns rr dissipation in the switching element and snubbers. T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 139 C 15 F(AV) C A Non-repetitive peak surge current I T = 25 C 160 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15A - 1.8 2.45 F Forward voltage V F I = 15 A, T = 150 C - 1.25 1.6 F J V = V rated - 0.01 15 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 200 J R R Junction capacitance C V = 600 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 08-Jul-15 Document Number: 93573 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETH1506S-M3, VS-ETH1506-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 21 26 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 25 36 F F R Reverse recovery time t ns rr T = 25 C -29 - J T = 125 C - 65 - J I = 15 A F T = 25 C - 3.9 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.0 - J V = 390 V R T = 25 C - 60 - J Reverse recovery charge Q nC rr T = 125 C - 240 - J Reverse recovery time t -42 - ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -21 - A RRM J F V = 390 V R Reverse recovery charge Q - 480 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.31.51C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07- oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) 2 PAK modified ETH1506S Case style D Marking device Case style TO-262 ETH1506-1 Revision: 08-Jul-15 Document Number: 93573 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000