VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current 2 AEC-Q101 qualified, meets JESD 201 class 1A TO-263AB (D PAK) TO-262AA whisker test Base cathode Meets MSL level 1, per J-STD-020, 2 2 LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 1 3 1 DESCRIPTION / APPLICATIONS N/C Anode N/C Anode Hyperfast recovery rectifiers designed with optimized VS-ETH3006SHM3 VS-ETH3006-1HM3 performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRODUCT SUMMARY The planar structure and the platinum doped life time control 2 Package TO-263AB (D PAK), TO-262AA guarantee the best overall performance, ruggedness and I 30 A F(AV) reliability characteristics. V 600 V R These devices are intended for use in PFC Boost stage in V at I 1.4 V F F the AC/DC section of SMPS, inverters or as freewheeling t (typ.) 27 ns rr diodes. T max. 175 C J The extremely optimized stored charge and low recovery Diode variation Single die current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 95 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 180 FSM C Operating junction and storage T , T -65 to +175 C J Stg temperatures ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.65 F Forward voltage V F I = 30 A, T = 150 C - 1.4 1.8 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - 50 300 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Jul-15 Document Number: 94425 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 26 35 F F R Reverse recovery time t T = 25 C -26- ns rr J T = 125 C - 70 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.6 - J V = 200 V R T = 25 C - 50 - J Reverse recovery charge Q nC rr T = 125 C - 280 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.951.4C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07 - oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) 2 Case style TO-263AB (D PAK) ETH3006SH Marking device Case style TO-262AA ETH3006-1H Revision: 10-Jul-15 Document Number: 94425 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000