X-On Electronics has gained recognition as a prominent supplier of VS-ETH3007T-N3 Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-ETH3007T-N3 Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

VS-ETH3007T-N3 Vishay

VS-ETH3007T-N3 electronic component of Vishay
VS-ETH3007T-N3 Vishay
VS-ETH3007T-N3 Rectifiers
VS-ETH3007T-N3  Semiconductors

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Part No. VS-ETH3007T-N3
Manufacturer: Vishay
Category: Rectifiers
Description: Rectifiers RECOMMENDED ALT 78-VS-ETH3007-M3
Datasheet: VS-ETH3007T-N3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0233 ea
Line Total: USD 1.02 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0233
5 : USD 0.9725
10 : USD 0.9628
25 : USD 0.9532
50 : USD 0.9436
100 : USD 0.9342
250 : USD 0.9248
500 : USD 0.9156
1000 : USD 0.9064

   
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We are delighted to provide the VS-ETH3007T-N3 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-ETH3007T-N3 and other electronic components in the Rectifiers category and beyond.

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VS-ETH3007-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base cathode Hyper fast and soft recovery 22 2 Low forward voltage drop 175 C operating junction temperature Low leakage current 1 True 2 pin package 1 3 33 Designed and qualified according to JEDEC -JESD 47 Cathode Anode 2L TO-220AC Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS I 30 A Ultra low V , soft-switching hyper fast rectifiers optimized F(AV) F for discontinuous (critical) mode (DCM) power factor V 650 V R correction (PFC). V at I 1.4 V F F The minimized conduction loss, optimized stored charge t typ. 33 ns rr and low recovery current minimized the switching losses and reduce over dissipation in the switching element and T max. 175 C J snubbers. Package 2L TO-220AC The device is also intended for use as a freewheeling diode Circuit configuration Single in power supplies and other power switching applications. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Repetitive peak reverse voltage V 650 V RRM Average rectified forward current I T = 120 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 210 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 650 - - R blocking voltage V R V I = 30 A - 1.8 2.1 F Forward voltage V F I = 30 A, T = 150 C - 1.4 1.6 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - 50 300 J R R Junction capacitance C V = 650 V - 22 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 06-Apr-18 Document Number: 96063 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-ETH3007-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A F T = 25 C dI /dt = 100 A/s -37 - J F V = 30 V R Reverse recovery time t ns rr T = 25 C -33 - J T = 125 C - 88 - J I = 30 A F T = 25 C - 18 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 30 - J V = 400 V R T = 25 C - 450 - J Reverse recovery charge Q nC rr T = 125 C - 1350 - J THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -55 - 175 C J Stg storage temperature range Thermal resistance, R -1.0 1.3 thJC junction to case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth, R -- 0.5 thCS case to heatsink and greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style 2L TO-220AC ETH3007 100 1000 175 C 100 150 C 10 10 T = 175 C J 1 1 0.1 25 C 0.01 T = 150 C J T = 25 C J 0.1 0.001 0 0.5 1.01.5 2.02.5 0 100 200300 400500 600700 V - Forward Voltage Drop (V) V (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 06-Apr-18 Document Number: 96063 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I (A) RM

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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