VS-ETL1506-M3, VS-ETL1506FP-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES State of the art low forward voltage drop Ultrafast soft recovery time 175 C operating junction temperature Low leakage current Fully isolated package (V = 2500 V ) INS RMS 2L TO-220AC 2L TO-220 FULL-PAK True 2 pin package Base Designed and qualified according to cathode JEDEC -JESD 47 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 3 1 2 DESCRIPTION Cathode Anode Cathode Anode State of the art, ultralow V , soft-switching ultrafast F VS-ETL1506-M3 VS-ETL1506FP-M3 rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge PRODUCT SUMMARY and low recovery current minimized the switching losses and reduce over dissipation in the switching element and Package 2L TO-220AC, 2L TO-220FP snubbers. I 15 A F(AV) The device is also intended for use as a freewheeling diode V 600 V R in power supplies and other power switching applications. V at I 0.85 V F F APPLICATIONS t (typ.) 60 ns rr AC/DC SMPS 70 W to 400 W T max. 175 C J e.g. laptop and printer AC adaptors, desktop PC, TV and Diode variation Single die monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM T = 157 C C Average rectified forward current in DC I 15 F(AV) FULL-PAK T = 120 C A C Non-repetitive peak surge current I T = 25 C 200 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 0.99 1.07 F Forward voltage V F I = 15 A, T = 150 C - 0.85 0.91 F J V = V rated - 0.01 15 R R Reverse leakage current I A R T = 150 C, V = V rated - 6 100 J R R Junction capacitance C V = 600 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 08-Jul-15 Document Number: 93531 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETL1506-M3, VS-ETL1506FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 60 110 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 185 270 F F R Reverse recovery time t ns rr T = 25 C - 210 - J T = 125 C - 290 - J I = 15 A F T = 25 C - 20 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 26 - J V = 390 V R T = 25 C - 2.2 - J Reverse recovery charge Q C rr T = 125 C - 4.0 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range -1.2 1.4 Thermal resistance, R thJC junction to case FULL-PAK - 3.7 4.3 Thermal resistance, C/W R Typical socket mount - - 70 thJA junction to ambient Typical thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2 - g Weight -0.07 - oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) Case style 2L TO-220AC ETL1506 Marking device Case style 2L TO-220 FULL-PAK ETL1506FP Revision: 08-Jul-15 Document Number: 93531 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000