VS-ETU3006FP-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES Low forward voltage drop Ultrafast soft recovery time 175 C operating junction temperature 1 2 Low leakage current 1 Cathode Anode Fully isolated package (V = 2500 V ) INS RMS 2 True 2 pin package 2L TO-220 FullPAK Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 30 A F(AV) DESCRIPTION V 600 V R V at I 1.15 V Ultralow V , soft-switching ultrafast rectifiers optimized for F F F Discontinuous (Critical) Mode (DCM) Power Factor t (typ.) 30 ns rr Correction (PFC). T max. 175 C J The minimized conduction loss, optimized stored charge Package 2L TO-220 FullPAK and low recovery current minimized the switching losses Circuit configuration Single and reduce over dissipation in the switching element an d snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current in DC I T = 72 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 200 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 1.4 2.0 F Forward voltage V F I = 30 A, T = 150 C - 1.15 1.35 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 250 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 25-Jul-2019 Document Number: 93538 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETU3006FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 30 45 F F R Reverse recovery time t T = 25 C -45 - ns rr J T = 125 C - 100 - J I = 30 A, F T = 25 C - 5.6 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 10 - J V = 200 V R T = 25 C - 127 - J Reverse recovery charge Q nC rr T = 125 C - 580 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -3.23.8 thJC junction-to-case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction-to-ambient Typical thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case-to-heatsink -2 -g Weight -0.07 - oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) Marking device Case style 2L TO-220 FullPAK ETU3006FP Revision: 25-Jul-2019 Document Number: 93538 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000