VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr 1 Designed and qualified according to JEDEC -JESD 47 33 Material categorization: TO-247AC 2L for definitions of compliance please see Base www.vishay.com/doc 99912 cathode BENEFITS 2 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count 13 Cathode Anode DESCRIPTION VS-HFA30PB120... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it PRIMARY CHARACTERISTICS features a superb combination of characteristics which I 30 A result in performance which is unsurpassed by any rectifier F(AV) previously available. With basic ratings of 1200 V and 30 A V 1200 V R continuous current, the VS-HFA30PB120... is especially well V at I 2.3 V F F suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the t typ. 47 ns rr HEXFRED product line features extremely low values of T max. 150 C J peak recovery current (I ) and does not exhibit any RRM Package TO-247AC 2L tendency to snap-off during the t portion of recovery. The b HEXFRED features combine to offer designers a rectifier Circuit configuration Single with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA30PB120... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 1200 V R Maximum continuous forward current I T = 100 C 30 F C Single pulse forward current I t = 10 ms 120 A FSM p Maximum repetitive forward current I 90 FRM T = 25 C 350 C Maximum power dissipation P W D T = 100 C 140 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 29-Nov-2019 Document Number: 94069 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 1200 - - BR R breakdown voltage I = 30 A -2.4 4.1 F V Maximum forward voltage V I = 60 A See fig. 1 - 3.1 5.7 FM F I = 30 A, T = 125 C - 2.3 4.0 F J V = V rated -1.3 40 R R Maximum reverse I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 1100 4000 J R R Junction capacitance C V = 200 V See fig. 3 - 50 75 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 47 - rr F F R Reverse recovery time t T = 25 C - 110 170 ns rr1 J See fig. 5, 10 t T = 125 C - 170 260 rr2 J I T = 25 C - 10 15 RRM1 J Peak recovery current A See fig. 6 I T = 125 C I = 30 A - 16 24 RRM2 J F dI /dt = 200 A/s F Q T = 25 C - 650 980 Reverse recovery charge rr1 J nC V = 200 V R See fig. 7 Q T = 125 C - 1540 2310 rr2 J Peak rate of fall of recovery dI /dt1 T = 25 C - 270 - (rec)M J current during t A/s b dI /dt2 T = 125 C - 240 - See fig. 8 (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --0.36 thJC junction to case Thermal resistance, R Typical socket mount - - 40 C/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.50 - thCS case to heatsink - 5.61 - g Weight - 0.198 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 2L HFA30PB120 Revision: 29-Nov-2019 Document Number: 94069 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000