VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Specified at operating conditions AEC-Q101 qualified Material categorization: for definitions of compliance please see 2 www.vishay.com/doc 99912 TO-263AB (D PAK) BENEFITS Base cathode Reduced RFI and EMI 2 Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing 1 3 Reduced parts count N/C Anode DESCRIPTION VS-HFA08TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. PRODUCT SUMMARY With basic ratings of 600 V and 8 A continuous current, the 2 Package TO-263AB (D PAK) VS-HFA08TB60S is especially well suited for use as the I 8 A F(AV) companion diode for IGBTs and MOSFETs. In addition to V 600 V R ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I ) and RRM V at I 1.4 V F F does not exhibit any tendency to snap-off during the t b t (typ.) 18 ns rr portion of recovery. The HEXFRED features combine to offer T max. 150 C J designers a rectifier with lower noise and significantly lower Diode variation Single die switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is ideally suited for applications in power supplies (PFC boost diode) and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R Maximum continuous forward current I T = 100 C 8 F C Single pulse forward current I 60 A FSM Maximum repetitive forward current I 24 FRM T = 25 C 36 C Maximum power dissipation P W D T = 100 C 14 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 26-Feb-16 Document Number: 94048 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 8.0 A -1.4 1.7 F V Maximum forward voltage V I = 16 A See fig. 1 -1.7 2.1 FM F I = 8.0 A, T = 125 C -1.4 1.7 F J -0.3 5.0 Maximum reverse V = V rated R R I See fig. 2 A RM T = 125 C, V = 0.8 x V rated leakage current J R R - 100 500 Junction capacitance C V = 200 V See fig. 3 - 10 25 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V -18- rr F F R Reverse recovery time t T = 25 C -37 55 ns rr1 J See fig. 5, 6 t T = 125 C -55 90 rr2 J I T = 25 C -3.5 5.0 RRM1 J Peak recovery current A I T = 125 C -4.5 8.0 RRM2 J I = 8.0 A F dI /dt = 200 A/s F Q T = 25 C - 65 138 Reverse recovery charge rr1 J V = 200 V nC R See fig. 7 Q T = 125 C - 124 360 rr2 J Peak rate of fall of dI /dt1 T = 25 C - 240 - (rec)M J recovery current during t A/s b See fig. 8 dI /dt2 T = 125 C - 210 - (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R -- 3.5 thJC junction to case K/W Thermal resistance, R Typical socket mount - - 80 thJA junction to ambient -2.0 - g Weight -0.07 - oz. 2 Marking device Case style TO-263AB (D PAK) HFA08TB60S Revision: 26-Feb-16 Document Number: 94048 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000