VS-HFA140FA60 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 140 A FEATURES Fast recovery time characteristic Electrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Designed and qualified for industrial level UL approved file E78996 SOT-227 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS The dual diode series configuration VS-HFA140FA60 is PRIMARY CHARACTERISTICS used for output rectification or freewheeling/clamping V 600 V R operation and high voltage application. V (typical) 1.33 V F The semiconductor in the SOT-227 package is isolated from t (typical) 43 ns rr the copper base plate, allowing for common heatsinks and I at T , per module 140 A at 110 C F(DC) C compact assemblies to be built. I at T , per module 140 A at 96 C F(AV) C These modules are intended for general applications such Package SOT-227 as power supplies, battery chargers electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R per leg 70 Continuous forward current I T = 110 C F C per module 140 A Single pulse forward current I T = 25 C 600 FSM J T = 25 C 357 C Maximum power dissipation, per leg P W D T = 110 C 114 C RMS isolation voltage V Any terminal to case, t = 1 minute 2500 V ISOL Operating junction and storage T , T -55 to +150 C J Stg temperature range ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 60 A - 1.33 1.70 F V I = 120 A - 1.56 2.04 F Forward voltage, per leg V FM I = 60 A, T = 125 C - 1.24 - F J I = 60 A, T = 150 C - 1.19 - F J V = V rated - 2.5 20 A R R Reverse leakage current, per leg I T = 125 C, V = V rated - 0.8 2 RM J R R mA T = 150 C, V = V rated - 3 9 J R R Revision: 11-Jan-18 Document Number: 93992 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA140FA60 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A dI /dt = 200 A/s V = 30 V - 43 - F F R Reverse recovery time, per leg t T = 25 C -90 - ns rr J T = 125 C - 150 - J I = 50 A F T = 25 C - 9.5 - J Peak recovery current, per leg I dI /dt = - 200 A/s A RRM F T = 125 C - 17 - J V = 200 V R T = 25 C - 400 - J Reverse recovery charge, per leg Q nC rr T = 125 C - 1180 - J Junction capacitance, per leg C V = 600 V - 67 - pF T R THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction to case, single leg conducting - - 0.35 R thJC Junction to case, both legs conducting - - 0.175 C/W Case to heatsink R Flat, greased surface - 0.05 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 1000 10 000 T = 150 C J 1000 T = 125 C J 100 100 10 T = 150 C J 10 1 T = 125 C J T = 25 C J T = 25 C J 0.1 1 0.01 0 100 200 300 400 500 600 0 0.5 1.0 1.5 2.0 2.5 3.0 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 100 10 10 100 1000 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 11-Jan-18 Document Number: 93992 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F C - Junction Capacitance (pF) T I - Reverse Leakage Current (A) R