V10150S, VI10150S
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Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.59 V at I = 5 A
F F
FEATURES
TMBS
Trench MOS Schottky technology
TO-220AB TO-262AA
Low forward voltage drop, low power losses
K
High efficiency operation
Solder bath temperature 275 C max. 10 s,
per JESD 22-B106
Material categorization: for definitions of compliance
3 3 please see www.vishay.com/doc?99912
2
2
1
1
TYPICAL APPLICATIONS
V10150S VI10150S
For use in high frequency DC/DC converters, switching
PIN 1 PIN 1
PIN 2 PIN 2
power supplies, freewheeling diodes, OR-ing diode, and
CASE K
PIN 3 PIN 3 reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB and TO-262AA
I 10 A
F(AV) Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
V 150 V
RRM
commercial grade
I 120 A
FSM
Terminals: matte tin plated leads, solderable per
V at I = 10 A 0.69 V
F F
J-STD-002 and JESD 22-B102
T max. 150 C
J
M3 suffix meets JESD 201 class 1A whisker test
Package TO-220AB, TO-262AA
Polarity: as marked
Diode variation Single
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOLV10150SVI10150SUNIT
Maximum repetitive peak reverse voltage V 150 V
RRM
Maximum average forward rectified current (fig. 1) I 10 A
F(AV)
Peak forward surge current 8.3 ms single half sine-wave
I 120 A
FSM
superimposed on rated load
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Operating junction and storage temperature range T , T -40 to +150 C
J STG
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
I = 5 A 0.79 -
F
T = 25 C
A
I = 10 A 1.05 1.20
F
(1)
Instantaneous forward voltage V V
F
I = 5 A 0.59 -
F
T = 125 C
A
I = 10 A 0.69 0.75
F
T = 25 C 1.3 - A
A
V = 100 V
R
T = 125 C 1.2 - mA
A
(2)
Reverse current I
R
T = 25 C - 150 A
A
V = 150 V
R
T = 125 C 3 15 mA
A
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Revision: 06-Nov-17 Document Number: 89246
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000V10150S, VI10150S
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V10150SVI10150SUNIT
Typical thermal resistance R 2.0 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V10150S-M3/4W 1.88 4W 50/tube Tube
TO-262AA VI10150S-M3/4W 1.45 4W 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
12 100
Resistive or Inductive Load
T = 150 C
A
10
8 10
T = 125 C
A
6
T = 100 C
A
1
4
T = 25 C
A
2
Mounted on Specific Heatsink
0 0.1
0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Case Temperature (C)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics
10 100
D = 0.8
D = 0.5
D = 0.3
T = 150 C
A
8 10
D = 0.2
T = 125 C
A
1
6
D = 1.0
T = 100 C
D = 0.1
A
0.1
4
T
0.01
2 T = 25 C
A
D = t /T t
p p
0.001
0
02 4 6 8 10 12 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Dissipation Characteristics Fig. 4 - Typical Reverse Characteristics
Revision: 06-Nov-17 Document Number: 89246
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Power Loss (W) Average Forward Rectified Current (A)
Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)