X-On Electronics has gained recognition as a prominent supplier of V10D202C-M3/I Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. V10D202C-M3/I Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

V10D202C-M3/I Vishay

V10D202C-M3/I electronic component of Vishay
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Part No.V10D202C-M3/I
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10A,200V,SMPD, TRENCH SKY RECT.
Datasheet: V10D202C-M3/I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.7722 ea
Line Total: USD 3088.8 
Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4000
Multiples : 1
4000 : USD 1.1317
5000 : USD 1.1205
6000 : USD 1.1093
10000 : USD 1.0982
15000 : USD 1.0871
20000 : USD 1.0763
25000 : USD 1.0656
30000 : USD 1.0549
50000 : USD 1.0443

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.7722

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the V10D202C-M3/I from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the V10D202C-M3/I and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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333 3 V10D202C www.vishay.com Vishay General Semiconductor Dual High-Voltage TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP Series Available Trench MOS Schottky technology generation 2 SMPD (TO-263AC) Very low profile - typical height of 1.7 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 2 Top View Bottom View AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance V10D202C please see www.vishay.com/doc 99912 Anode 1 K Anode 2 Cathode TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 3D Models MECHANICAL DATA Case: SMPD (TO-263AC) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 5.0 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant V 200 V RRM Base P/NHM3 X - halogen-free, RoHS-compliant, and I 100 A FSM AEC-Q101 qualified (X denotes revision code e.g. A, B, ...) V at I = 5.0 A (T = 125 C) 0.67 V F F A Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package SMPD (TO-263AC) M3 and HM3 suffix meets JESD 201 class 2 whisker test Circuit configuration Common cathode Polarity: As marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10D202C UNIT Maximum repetitive peak reverse voltage V 200 V RRM per device 10 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 5 Maximum DC reverse voltage V 160 V DC Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +175 C J STG Revision: 27-Feb-2020 Document Number: 87746 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V10D202C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.75 - F T = 25 C A I = 5 A 0.82 0.9 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.6 - F T = 125 C A = 5 A 0.67 0.74 I F T = 25 C 0.4 - A A V = 160 V R T = 125 C 0.5 - mA A (2) Reverse current at rated V per diode I R R T = 25 C - 50 A A V = 200 V R T = 125 C 1.3 5 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10D202CUNIT per diode 3.5 R JC Typical thermal resistance per device 2.5 C/W (1)(2) per device R 58 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R - junction-to -mount D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) UNIT WEIGHT PACKAGE PACKAGE PREFERRED P/N BASE QUANTITY DELIVERY MODE (g) CODE SMPD (TO-263AC) V10D202C-M3/I 0.55 I 2000/reel 13 diameter plastic tape and reel (1) SMPD (TO-263AC) V10D202CHM3 A/I 0.55 I 2000/reel 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 4.5 D = 0.8 D = 0.5 Rth =2.5 C/W 4.0 JC 10 D = 0.3 3.5 D = 1.0 8 3.0 D = 0.2 2.5 6 D = 0.1 2.0 Rth =58 C/W JA 4 1.5 T 1.0 2 0.5 D = t /T t p p 0 0.0 0 25 50 75 100 125 150 175 0123456 Average Forward Current (A) Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 27-Feb-2020 Document Number: 87746 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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