333 3 V10D100C www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.48 V at I = 2.5 A F F FEATURES eSMP Series Available Trench MOS Schottky technology generation 2 SMPD (TO-263AC) Very low profile - typical height of 1.7 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C Top View Bottom View AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 V10D100C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 K Anode 1 Anode 2 Cathode TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching LINKS TO ADDITIONAL RESOURCES power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and 3D Models automotive application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPD (TO-263AC) I 2 x 5.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and I 100 A FSM AEC-Q101 qualified V at I = 5.0 A (T = 125 C) 0.60 V F F A Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package SMPD (TO-263AC) M3 and HM3 suffix meets JESD 201 class 2 whisker test Circuit configuration Common cathode Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10D100C UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 10 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 5 Maximum DC reverse voltage V 160 V DC Peak forward surge current 10 ms single half sine-wave I 100 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 19-Mar-2020 Document Number: 89998 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V10D100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.55 - F T = 25 C A I = 5.0 A 0.67 0.75 F (1) Instantaneous forward voltage V V F I = 2.5 A 0.48 - F T = 125 C A I = 5.0 A 0.60 0.68 F T = 25 C 2.3 - A A V = 70 V R T = 125 C 2.3 - mA A (2) Reverse current at rated V per diode I R R T = 25 C - 500 A A V = 100 V R T = 125 C 7 20 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10D100CUNIT per diode 3.5 R JC Typical thermal resistance per device 2.5 C/W (1)(2) per device R 48 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R - junction-to-mount D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) UNIT WEIGHT PACKAGE PREFERRED P/N PACKAGE CODE BASE QUANTITY DELIVERY MODE (g) SMPD (TO-263AC) V10D100C-M3/I 0.55 I 2000/reel 13 diameter plastic tape and reel (1) SMPD (TO-263AC) V10D100CHM3/I 0.55 I 2000/reel 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 19-Mar-2020 Document Number: 89998 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000