VS-HFA15PB60PbF, VS-HFA15PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Designed and qualified according to JEDEC -JESD47 2 3 Material categorization: for definitions of compliance please see 1 www.vishay.com/doc 99912 TO-247AC modied Available Base BENEFITS common Reduced RFI and EMI cathode Reduced power loss in diode and switching transistor 2 Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 13 VS-HFA15PB60... is a state of the art ultrafast recovery Cathode Anode diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A continuous current, the VS-HFA15PB60... is especially well suited for use as the PRODUCT SUMMARY companion diode for IGBTs and MOSFETs. In addition to Package TO-247AC modified (2 pins) ultrafast recovery time, the HEXFRED product line features I 15 A extremely low values of peak recovery current (I ) and F(AV) RRM does not exhibit any tendency to snap-off during the t b V 600 V R portion of recovery. The HEXFRED features combine to offer V at I 1.2 V F F designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching t typ. 19 ns rr transistor. These HEXFRED advantages can help to T max. 150 C J significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA15PB60... is ideally Diode variation Single die suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R Maximum continuous forward current I T = 100 C 15 F C Single pulse forward current I 150 A FSM Maximum repetitive forward current I 60 FRM T = 25 C 74 C Maximum power dissipation P W D T = 100 C 29 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 10-Jul-15 Document Number: 94052 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA15PB60PbF, VS-HFA15PB60-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 15 A -1.3 1.7 F V Maximum forward voltage V I = 30 A See fig. 1 - 1.5 2.0 FM F I = 15 A, T = 125 C - 1.2 1.6 F J -1.0 10 V = V rated Maximum reverse R R I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 400 1000 J R R Junction capacitance C V = 200 V See fig. 3 - 25 50 pF T R Series inductance L Measured lead to lead 5 mm from package body - 12 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 19 - rr F F R Reverse recovery time t T = 25 C -42 60 ns rr1 J See fig. 5, 10 t T = 125 C - 74 120 rr2 J I T = 25 C - 4.0 6.0 RRM1 J Peak recovery current A See fig. 6 I = 15 A I T = 125 C F - 6.5 10 RRM2 J dI /dt = 200 A/s F Q T = 25 C - 80 180 Reverse recovery charge rr1 J V = 200 V nC R See fig. 7 Q T = 125 C - 220 600 rr2 J Peak rate of fall of dI /dt1 T = 25 C - 188 - (rec)M J recovery current during t A/s b dI /dt2 T = 125 C - 160 - (rec)M J See fig. 8 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --1.7 thJC junction to case Thermal resistance, R Typical socket mount - - 40 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.25 - thCS case to heatsink -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC modified (JEDEC) HFA15PB60 Revision: 10-Jul-15 Document Number: 94052 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000