VS-HFA16PA120C-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Designed and qualified according to 1 JEDEC -JESD 47 2 Material categorization: 3 for definitions of compliance please see TO-247AC 3L www.vishay.com/doc 99912 Common BENEFITS cathode Reduced RFI and EMI 2, Base Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 13 VS-HFA16PA120C... is a state of the art ultrafast recovery Anode Anode diode. Employing the latest in epitaxial construction and 1 2 advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A per leg continuous PRIMARY CHARACTERISTICS current, the VS-HFA16PA120C... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In I 2 x 8 A F(AV) addition to ultrafast recovery time, the HEXFRED product V 1200 V R line features extremely low values of peak recovery current (I ) and does not exhibit any tendency to snap-off V at I 2.4 V RRM F F during the t portion of recovery. The HEXFRED features b t typ. 28 ns rr combine to offer designers a rectifier with lower noise an d T max. 150 C significantly lower switching losses in both the diode and the J switching transistor. These HEXFRED advantages can help Package TO-247AC 3L to significantly reduce snubbing, component count and Circuit configuration Common cathode heatsink sizes. The HEXFRED VS-HFA16PA120C... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 1200 V R per leg 8 Maximum continuous forward current I T = 100 C F C per device 16 A Single pulse forward current I t = 10 ms 130 FSM p Maximum repetitive forward current I 32 FRM T = 25 C 73.5 C Maximum power dissipation P W D T = 100 C 29 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 11-Oct-2019 Document Number: 94055 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-HFA16PA120C-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 1200 - - BR R breakdown voltage I = 8.0 A - 2.6 3.3 F V Maximum forward voltage V I = 16 A - 3.4 4.3 FM F I = 8.0 A, T = 125 C - 2.4 3.1 F J V = V rated - 0.31 10 R R Maximum reverse I A RM leakage current T = 125 C, V = 0.8 x V rated - 135 1000 J R R Junction capacitance C V = 200 V - 11 20 pF T R Series inductance L Measured lead to lead 5 mm from package - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 28 - rr F F R Reverse recovery time t T = 25 C -63 95 ns rr1 J t T = 125 C - 106 160 rr2 J I T = 25 C - 4.5 8.0 RRM1 J Peak recovery current A I = 8.0 A F I T = 125 C - 6.2 11 RRM2 J dI /dt = 200 A/s F Q T = 25 C - 140 380 rr1 J V = 200 V R Reverse recovery charge nC Q T = 125 C - 335 880 rr2 J dI /dt1 T = 25 C - 133 - Peak rate of recovery current (rec)M J A/s during t b dI /dt2 T = 125 C - 85 - (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --1.7 thJC junction to case Thermal resistance, R Typical socket mount - - 40 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.25 - thCS case to heatsink -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 3L HFA16PA120C Revision: 11-Oct-2019 Document Number: 94055 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000