VS-HFA16TA60CS-M3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES Ultrafast and ultrasoft recovery and Q Very low I RRM rr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum 2 peak of 245 C 1 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 D PAK (TO-263AB) BENEFITS Base Reduced RFI and EMI common Reduced power loss in diode and switching transistor cathode 2 Higher frequency operation Reduced snubbing Reduced parts count 2 1 3 DESCRIPTION Common AnodeAnode VS-HFA16TA60CS is a state of the art center tap ultrafast cathode recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A per leg continuous current, the VS-HFA16TA60CS is especially well suited for use as the companion diode for IGBTs and PRIMARY CHARACTERISTICS MOSFETs. In addition to ultrafast recovery time, the I 2 x 8 A HEXFRED product line features extremely low values of F(AV) peak recovery current (I ) and does not exhibit any RRM V 600 V R tendency to snap-off during the t portion of recovery. The b V at I 1.4 V F F HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in t typ. 18 ns rr both the diode and the switching transistor. These T max. 150 C J HEXFRED advantages can help to significantly reduce 2 snubbing, component count and heatsink sizes. The Package D PAK (TO-263AB) HEXFRED VS-HFA16TA60CS is ideally suited for Circuit configuration Common cathode applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R per leg 8 Maximum continuous forward current I T = 100 C F C per device 16 A Single pulse forward current I 60 FSM Maximum repetitive forward current I 24 FRM T = 25 C 36 C Maximum power dissipation P W D T = 100 C 14 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 02-Apr-2019 Document Number: 96220 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-HFA16TA60CS-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown V I = 100 A 600 - - BR R voltage I = 8.0 A -1.4 1.7 F V Maximum forward voltage V I = 16 A See fig. 1 - 1.7 2.1 FM F I = 8.0 A, T = 125 C - 1.4 1.7 F J V = V rated -0.3 5.0 R R Maximum reverse leakage current I See fig. 2 A RM T = 125 C, V = 0.8 x V rated - 100 500 J R R Junction capacitance C V = 200 V See fig. 3 - 10 25 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 18 - rr F F R Reverse recovery time t T = 25 C -37 55 ns rr1 J See fig. 5, 6 and 16 t T = 125 C - 55 90 rr2 J I T = 25 C - 3.5 5.0 RRM1 J Peak recovery current A I = 8.0 A F See fig. 7 and 8 I T = 125 C - 4.5 8.0 RRM2 J dI /dt = 200 A/s F Q T = 25 C - 65 138 Reverse recovery charge rr1 J V = 200 V R nC See fig. 9 and 10 Q T = 125 C - 124 360 rr2 J dI /dt1 T = 25 C - 240 - Peak rate of fall of recovery current (rec)M J A/s during t , see fig. 11 & 12 b dI /dt2 T = 125 C - 210 - (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Junction to case, -- 3.5 single leg conducting R thJC Junction to case, -- 1.75 K/W both legs conducting Thermal resistance, R Typical socket mount - - 80 thJA junction to ambient -2 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Marking device Case style D PAK (TO-263AB) HFA16TA60CS Revision: 02-Apr-2019 Document Number: 96220 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000