X-On Electronics has gained recognition as a prominent supplier of UJ3D06506TS Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. UJ3D06506TS Schottky Diodes & Rectifiers are a product manufactured by UnitedSiC. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

UJ3D06506TS UnitedSiC

UJ3D06506TS electronic component of UnitedSiC
UJ3D06506TS UnitedSiC
UJ3D06506TS Schottky Diodes & Rectifiers
UJ3D06506TS  Semiconductors

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See Product Specifications
Part No. UJ3D06506TS
Manufacturer: UnitedSiC
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 650V/6A SiC SCHOTTKY DIODE G3, TO-220, ENHANCED SURGE
Datasheet: UJ3D06506TS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.2273 ea
Line Total: USD 4.23 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 4.2273
10 : USD 3.0012
50 : USD 1.647
1000 : USD 1.5719

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Cnhts
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UJ3D06506TS from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UJ3D06506TS and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Gen-III 6A - 650V SiC Schottky Diode UJ3D06506TS . Datasheet . Description CASE rd United Silicon Carbide, Inc. offers the 3 generation of high CASE performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 1 2 1 2 Part Number Package Marking UJ3D06506TS TO-220-2L UJ3D06506TS Features Typical Applications w 175C maximum operating junction temperature w Power converters w Easy paralleling w Industrial motor drives Extremely fast switching not dependent on temperature w w Switching-mode power supplies No reverse or forward recovery w w Power factor correction modules w Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered 100% UIS tested w w AEC-Q101 qualified Maximum Ratings Parameter Symbol Test Conditions Value Units DC blocking voltage V 650 V R Repetitive peak reverse voltage, T =25C V 650 V j RRM Surge peak reverse voltage V 650 V RSM T = 153C Maximum DC forward current I 6 A C F T = 25C, t = 10ms Non-repetitive forward surge current 45 C p I A FSM sine halfwave T = 110C, t =10ms 39 C p T = 25C, t = 10ms 29.5 Repetitive forward surge current C p I A FRM sine halfwave, D=0.1 T = 110C, t =10ms 17.9 C p T = 25C, t =10ms 320 C p I Non-repetitive peak forward current A F,max T = 110C, t =10ms 320 C p T = 25C, t =10ms 10.1 C p 2 2 2 i t value i dt A s T = 110C, t =10ms 7.6 C p T = 25C 93.4 C P Power dissipation W Tot T = 153C 13.4 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only 1.6mm from case for T 260 C sold allowed at leads 10s Rev. A, September 2018 1 For more information go to www.unitedsic.com. Gen-III 6A - 650V SiC Schottky Diode UJ3D06506TS . Datasheet . Electrical Characteristics T = +25C unless otherwise specified J Value Parameter Symbol Test Conditions Units Min Typ Max I =6A, T =25C - 1.5 1.7 F J V Forward voltage I =6A, T =150C V F - 1.8 2.1 F J I =6A, T =175C - 1.9 2.25 F J V =650V, T =25C - 0.7 40 R J Reverse current I mA R V =650V, T =175C - 6 R J (1) Q V =400V Total capacitive charge 14.5 nC C R V =1V, f=1MHz 196 R V =300V, f=1MHz Total capacitance C 24 pF R V =600V, f=1MHz 21 R Capacitance stored energy E V =400V 2.2 mJ C R (1) Q is independent on T , di /dt, and I as shown in the application note USCi AN0011. c J F F Thermal characteristics Value Parameter symbol Test Conditions Units Min Typ Max Thermal resistance, junction - case R 1.2 1.6 C/W qJC Typical Performance 12 30 - 55C - 55C 25C 10 25 25C 100C 100C 150C 150C 8 20 175C 175C 6 15 4 10 2 5 0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 Forward Voltage, V (V) Forward Voltage, V (V) F F Figure 1 Typical forward characteristics Figure 2 Typical forward characteristics in surge current Rev. A, September 2018 2 For more information go to www.unitedsic.com. Forward Current, I (A) F Forward Current, I (A) F

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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