Silicon Carbide Schottky Diode 650 V, 6 A FFSPF0665A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1. Cathode 2. Anode faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size and cost. Features Max Junction Temperature 175C Avalanche Rated 36 mJ High Surge Current Capacity 1 Positive Temperature Coefficient 2 Ease of Paralleling TO220F2FS CASE 221AS No Reverse Recovery/No Forward Recovery This Device is PbFree, Halogen Free/BFR Free and RoHS MARKING DIAGRAM Compliant Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFSPF 0665A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSPF0665A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2020 Rev. 3 FFSPF0665A/DFFSPF0665A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 36 mJ AS I Continuous Rectified Forward Current T < 134C 6 A F C Continuous Rectified Forward Current T < 135C 5.9 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 430 A F, Max C 415 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 42 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 22 A F,RM p Ptot Power Dissipation T = 25C 35 W C T = 150C 5.8 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 36 mJ is based on starting T = 25C, L = 0.5 mH, I = 12 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 4.3 C/W JC R Thermal Resistance, Junction to Ambient, Max 57 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 6 A, T = 25C 1.50 1.75 V F F C I = 6 A, T = 125C 1.60 2.0 F C I = 6 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 22 nC C C Total Capacitance V = 1 V, f = 100 kHz 361 pF R V = 200 V, f = 100 kHz 41 R V = 400 V, f = 100 kHz 32 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSPF0665A FFSPF0665A TO220F2L 50 Units / Tube (Pb-Free) www.onsemi.com 2