Silicon Carbide Schottky Diode 650 V, 8 A FFSPF0865A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and 1. Cathode 2. Anode reduced system size and cost. Features Max Junction Temperature 175C Avalanche Rated 49 mJ High Surge Current Capacity 1. 2. Positive Temperature Coefficient TO220F2L CASE 221AS Ease of Paralleling No Reverse Recovery/No Forward Recovery MARKING DIAGRAM This Device is PbFree, Halogen Free/BFR Free and RoHS Compliant Applications General Purpose SMPS, Solar Inverter, UPS Y&Z&3&K Power Switching Circuits FFSPF 0865A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FFSPF0865A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2019 Rev. 2 FFSPF0865A/DFFSPF0865A ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter FFSPF0865A Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 49 mJ AS I A Continuous Rectified Forward Current T < 124 C 8 F C Continuous Rectified Forward Current T < 135 C 6.8 C I NonRepetitive Peak Forward Surge Current T = 25C, 10 s 670 A F, Max C T = 150C, 10 s 640 A C I NonRepetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 49 A F, SM p I Repetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 25 A F, RM p P Power Dissipation T = 25 C 39 W tot C T = 150C 6.4 W C T , T Operating and Storage Junction Temperature Range 55 to + 175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 4.0 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 8 A, T = 25C 1.50 1.75 V F F C I = 8 A, T = 125C 1.6 2.0 F C I = 8 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 27 nC C C Total Capacitance pF V = 1 V, f = 100 kHz 463 R V = 200 V, f = 100 kHz 48 R V = 400 V, f = 100 kHz 38 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. E of 49 mJ is based on starting TJ = 25C, L = 0.5 mH, I = 14 A, V = 50 V. AS AS ORDERING INFORMATION Device Marking Package Packing Method Quantity FFSPF0865A FFSPF0865A TO220F2L Tube 50 units www.onsemi.com 2