LL5817 L0G Taiwan Semiconductor

LL5817 LL5819 Taiwan Semiconductor 1A, 20 - 40V Schottky Barrier Surface Mount Rectifier FEATURES KEY PARAMETERS Plastic package has carries underwriters PARAMETER VALUE UNIT Ideal for automated placement I 1 A F Surge overload rating to 25A peak V 20 - 40 V RRM Reliable low cost construction utilizing molded RoHS Compliant I 25 A FSM Halogen-free according to IEC 61249-2-21 T 125 C J MAX Package MELF APPLICATIONS Configuration Single die Inverters Converters Adapters MECHANICAL DATA Case: MELF Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 120.00mg (approximately) MELF ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LL5817 LL5818 LL5819 UNIT Repetitive peak reverse voltage V 20 30 40 V RRM Reverse voltage, total rms value V 14 21 28 V R(RMS) DC blocking voltage V 20 30 40 V DC Forward current I 1 A F Surge peak forward current 8.3ms single half sine-wave superimposed I 25 A FSM on rated load Junction temperature T -65 to +125 C J Storage temperature T -65 to +125 C STG 1 Version: I2006 LL5817 LL5819 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-Ambient thermal resistance R 80 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1A - 0.450 V F LL5817 I = 3A - 0.750 V F I = 1A - 0.550 V F (1) Forward voltage LL5818 V F I = 3A - 0.875 V F I = 1A - 0.600 V F LL5819 I = 3A - 0.900 V F T = 25C - 0.5 mA J (2) Reverse current rated V I R R T = 100C - 5 mA J Junction capacitance 1MHz, V = 4.0V C 110 - pF R J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING LL581x L0G MELF 5,000/13 reel Notes: 1. x defines voltage from 20V(LL5817) to 40V(LL5819) 2 Version: I2006