X-On Electronics has gained recognition as a prominent supplier of LLDB3 Diacs across the USA, India, Europe, Australia, and various other global locations. LLDB3 Diacs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diacs, ensuring timely deliveries around the world.

LLDB3 Taiwan Semiconductor

LLDB3 electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.LLDB3
Manufacturer: Taiwan Semiconductor
Category: Diacs
Description: Taiwan Semiconductor Diacs 150mW Bi-directional Trigger Diode
Datasheet: LLDB3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6141
25 : USD 0.2909
100 : USD 0.141
250 : USD 0.1274
500 : USD 0.1103
1000 : USD 0.0832
2500 : USD 0.0712
5000 : USD 0.0642
10000 : USD 0.0551
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Breakover Voltage VBO
Breakover Current IBO Max
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Maximum Operating Temperature
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the LLDB3 from our Diacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LLDB3 and other electronic components in the Diacs category and beyond.

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LLDB3/ LLDB3TG Taiwan Semiconductor Small Signal Product 150mW Bi-directional Trigger Diode FEATURES - Surface mounted device - Hermetically sealed glass - Matte Tin(Sn) terminal finish - All external surfaces are corrosion resistant and terminals are readily solderable MECHANICAL DATA - Case: Mini-MELF package - High temperature soldering guaranteed: 260C/10s Mini-MELF (LL34) - Weight: 29 2.5 mg Hermetically Sealed Glass - Terminal: Pure tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed - Pb free and RoHS compliant MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Repetitive Peak Forward Current Pulse Width = 20s I 2 A FRM Power Dissipation P 150 mW D o Thermal Resistance (Junction to Ambient) (Note) R 400 C/W JA o Junction and Storage Temperature Range T , T - 40 to + 125 C J STG Notes: Valid provided that electrodes are kept at ambient temperature PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT LLDB3 28 32 36 V Break-Over Voltage C=22nF V BO LLDB3TG 30 32 34 LLDB3 3 Break-Over Voltage Symmetry + / -V C=22nF V BO LLDB3TG 2 LLDB3 5 Dynamic Breakdown Voltage V I to I =10mA V BO F LLDB3TG 9 Output Voltage V (Note) 5 V O Leakage Current I V = 0.5V (Max) 10 A B B BO LLDB3 100 I Break-Over Current C=22nF A BO LLDB3TG - 15 Notes: Test Circuit Version: D14 Document Number: DS S1407002 Not RecommendedLLDB3/ LLDB3TG Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25 unless otherwise noted) A Fig. 1 Admissible Power Dissipation Curve 1 60 1 20 8 0 4 0 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 00 1 10 1 20 1 30 o Ambient Tempeatature ( C) Fig. 3 Repetitive Peak Pulse Current VS. Fig. 2 Relative Variation of VBO VS. Junction Pulse Duration (Maximum Values) Temperature (Typical Values) 1 .0 8 1 00 1 .0 7 1 .0 6 1 0 1 .0 5 1 .0 4 1 .0 3 1 1 .0 2 1 .0 1 1 0 .1 2 5 5 0 7 5 1 00 1 25 1 1 0 1 00 tp (s) Tj (C) V : Break-Over Voltage BO I : Break-Over Current BO V : Dynamic Breakover Voltage I : Leakage Current at V =0.5*V B B BO V : Voltage at Current I =10mA F F Version: D14 Document Number: DS S1407002 Not Recommended V Tj / V Tj=25 C BO BO Power Dissipation (mW) Repetitive Peak Pulse Current (A)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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