X-On Electronics has gained recognition as a prominent supplier of TMMDB3TG Diacs across the USA, India, Europe, Australia, and various other global locations. TMMDB3TG Diacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Diacs, ensuring timely deliveries around the world.

TMMDB3TG STMicroelectronics

TMMDB3TG electronic component of STMicroelectronics
TMMDB3TG STMicroelectronics
TMMDB3TG Diacs
TMMDB3TG Semiconductors

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See Product Specifications
Part No. TMMDB3TG
Manufacturer: STMicroelectronics
Category: Diacs
Description: Diac; Ifmax:2A; MiniMELF; 30÷34V
Datasheet: TMMDB3TG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.1143 ea
Line Total: USD 285.75 
Availability - 19400
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
82
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 85
Multiples : 1
85 : USD 0.6487
164 : USD 0.3957
197 : USD 0.3301
1000 : USD 0.3145
2500 : USD 0.2879

24250
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 5000
Multiples : 2500
5000 : USD 0.0806

2942
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 0.49
10 : USD 0.371
20 : USD 0.315
100 : USD 0.203
131 : USD 0.1288

19400
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.1143
5000 : USD 0.0727
7500 : USD 0.0719
10000 : USD 0.0712
12500 : USD 0.0686
17500 : USD 0.068
25000 : USD 0.0673
50000 : USD 0.0641
62500 : USD 0.0636
100000 : USD 0.0631
125000 : USD 0.0623

24250
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 5000
Multiples : 2500
5000 : USD 0.0806

   
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Type Of Semiconductor Component
Max Load Current
Breakover Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TMMDB3TG from our Diacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TMMDB3TG and other electronic components in the Diacs category and beyond.

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TMMDB3TG Datasheet Diac in MINIMELF package with tight V BO Features V : 32 V BO Low breakover voltage: 15 A max. Breakover voltage range: 30 to 34 V Applications General purpose AC line load switching Motor control circuits Home appliances MINIMELF Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Functioning as a trigger diode with a fixed voltage reference, the TMMDB3TG can be used in conjunction with Triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. Product status link TMMDB3TG Product summary Order code V BO TMMDB3TG 30 - 34 V DS0700 - Rev 3 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.TMMDB3TG Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit I Repetitive peak on-state current, t = 20 s, F = 120 Hz 2 A TRM p T Storage junction temperature range -40 to +125 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Parameter Test conditions Value Unit Min. 30 (1) (2) V Breakover voltage C = 10 nF Typ. 32 V BO Max. 34 (2) I V - V I Breakover voltage symmetry Max. 2 V BO1 BO2 C = 10 nF (1) V V and V at 10 mA Min. 9 V Dynamic breakover voltage BO F (1) V See Figure 2. Test circuit , (R = 20 ) Min. 5 V O Output voltage (1) (2) I Breakover current C = 10 nF Max. 15 A BO (1) t Rise time See Figure 3. Rise time measurement Max. 2 s r (1) I V = 0.5 x V max Leakage current Max. 10 A R R BO (1) I Peak current See Figure 2. Test circuit Min. 0.30 A P 1. Applicable to both forward and reverse directions. 2. Connected in parallel to the device Figure 1. Voltage - current characteristic curve. +I F 10 mA I BO I - V R +V 0,5 V BO V V V F BO - I F DS0700 - Rev 3 page 2/9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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