TN1205H-6G-TR STMicroelectronics

TN1205H Datasheet High temperature 12 A SCRs Features A High junction temperature: T = 150 C j G Medium current SCRs K A High noise immunity up to 150 C A RoHS (2002/95/EC) compliant 600 V V , V DRM RRM K A K A G G Applications DPAK TO-220AB General purpose AC line load switching Motor control circuits Small home appliances Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Available in standard gate triggering levels, the TN1205H SCR series has very high switching capability up to a junction temperature of 150 C. These products fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush Product status link current limiting circuits, capacitive discharge ignition and voltage regulation circuits. TN1205H These products are particulary adapted for use in areas where the ambient temperature is high or the ventilation low, or where an increase of power density is Product summary required. Through-hole or surface-mount packages provide performance in a limited space V , V 600 V DRM RRM area. I 2 to 5 mA GT DS7117 - Rev 5 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.TN1205H Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle)) 12 T(RMS) 2 D PAK, T = 136 C A c TO-220AB I Average on-state current (180 conduction angle) 7.6 T(AV) t = 8.3 ms 126 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 120 p 2 2 2 t = 10 ms 72 I t I t value for fusing p A s dl/dt Critical rate of rise of on-state current, I = 2 x I , tr 100 ns, F = 60 Hz T = 150 C 100 A/s G GT j V / V /V DSM DRM RRM t = 10 ms Non Repetitive peak off-state voltage V p V +100 RSM I t = 20 s T = 150 C Peak gate current 4 A GM p j P T = 150 C Average gate power dissipation 1 W G(AV) j V Maximum peak reverse gate voltage 5 V RGM T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit Max. 2 (1) I mA GT V = 12 V, R = 33 Max. 5 D L V Max. 1.3 V GT V V = V , R = 3.3 k GD D DRM L Min. 0.2 V I I = 1.2 x I Max. 40 mA L G GT (2) I I = 500 mA, gate open Max. 20 mA T H T = 125 C 200 j (2) V = 67% V , gate open Min. V/s dV/dt D DRM T = 150 C 100 j t I = 40 A, V = 500 V, I = 100 mA, dI /dt = 5 A/s Typ. 1.9 s gt TM D G G V = 335 V, T =125 C, I = 20 A, V = 25 V, (dI /dt) = 30 A/s, dV /dt = 50 DM j TM R T Max D t Typ. 65 s q V/s, R = 100 GK 1. Minimum I is guaranteed at 20% of I max. GT GT 2. For both polarities of A2 referenced to A1. DS7117 - Rev 5 page 2/14