X-On Electronics has gained recognition as a prominent supplier of TN1205T-600B-TR SCRs across the USA, India, Europe, Australia, and various other global locations. TN1205T-600B-TR SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TN1205T-600B-TR STMicroelectronics

TN1205T-600B-TR electronic component of STMicroelectronics
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See Product Specifications
Part No. TN1205T-600B-TR
Manufacturer: STMicroelectronics
Category: SCRs
Description: Thyristor; 600V; 8A; 12A; 5mA; Package: Reel, tape; SMD; DPAK
Datasheet: TN1205T-600B-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.4448 ea
Line Total: USD 1112 
Availability - 4850
Ship by Mon. 21 Apr to Fri. 25 Apr
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
1547
Ship by Mon. 21 Apr to Fri. 25 Apr
MOQ : 129
Multiples : 1
129 : USD 0.5214
130 : USD 0.516
132 : USD 0.5094
134 : USD 0.5028
250 : USD 0.4962
500 : USD 0.4896
1000 : USD 0.4645

4850
Ship by Mon. 21 Apr to Fri. 25 Apr
MOQ : 2500
Multiples : 2500
2500 : USD 0.5243
5000 : USD 0.4863
7500 : USD 0.467
12500 : USD 0.4595

1543
Ship by Thu. 17 Apr to Mon. 21 Apr
MOQ : 1
Multiples : 1
1 : USD 1.19
10 : USD 1.0206
26 : USD 0.7252
71 : USD 0.686
1000 : USD 0.6594

1547
Ship by Mon. 21 Apr to Fri. 25 Apr
MOQ : 130
Multiples : 1
130 : USD 0.499
132 : USD 0.4927
134 : USD 0.4864
250 : USD 0.4799
500 : USD 0.4736
1000 : USD 0.4493

4850
Ship by Mon. 21 Apr to Fri. 25 Apr
MOQ : 2500
Multiples : 2500
2500 : USD 0.4448
5000 : USD 0.4368
7500 : USD 0.4307
12500 : USD 0.4245

2425
Ship by Mon. 21 Apr to Fri. 25 Apr
MOQ : 2500
Multiples : 2500
2500 : USD 0.4784
5000 : USD 0.4698
7500 : USD 0.4634
12500 : USD 0.4566

1892
Ship by Mon. 21 Apr to Fri. 25 Apr
MOQ : 141
Multiples : 1
141 : USD 0.7557
250 : USD 0.7254
500 : USD 0.6992
1000 : USD 0.6504

   
Manufacturer
Product Category
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN1205T-600B-TR from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN1205T-600B-TR and other electronic components in the SCRs category and beyond.

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TN1205T-600 12 A SCR Features High current density per square mm Applications Overvoltage crowbar protection A Motor control circuits in power tools and kitchen aids K Inrush current limiting circuits A G Description DPAK This device is mounted in DPAK and intended for TN1205T-600B use in applications such as voltage regulators circuits for motorbikes, overvoltage crowbar protection, motor control circuits in power tools and capacitive discharge ignition. Table 1. Device summary I 12 A T(rms) V /V 600 V DRM RRM I 2 to 5 mA GT October 2009 Doc ID 16339 Rev 1 1/8 www.st.com 8Characteristics TN1205T-600 1 Characteristics (1) Table 2. Absolute ratings Symbol Parameter Value Unit I On-state rms current (180 C conduction angle) T = 103 C 12 A T(RMS) c I Average on-state current(180 C conduction angle) T = 103 C 8 A T(AV) c t = 8.3 ms 120 p I Non repetitive surge peak on-state current A TSM t = 10 ms 115 p 2 2 2 ITI T value for fusing t = 10 ms 66 A s p Critical rate of rise of on-state current di/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , tr 100 ns G GT I Peak gate current t = 20 s T = 125 C 4 A GM p c P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to + 150 stg C T Operating junction temperature range -40 to + 125 j 1. T = 25 C, unless otherwise specified j (1) Table 3. Electrical characteristics Symbol Test conditions Min. Typ. Max. Unit I V = 12 V, R = 33 25mA GT D L V V = 12 V, R = 33 1.3 V GT D L V V = V R = 3.3 k T = 125 C 0.2 V GD D DRM, L j I I = 500 mA gate open 15 mA H T I I = 1.2 I 30 mA L G GT dV/dt V = 67% V gate open T = 125 C 100 V/s D DRM j Gate controlled turn on time t I = 40 A, V = V , I = 100 mA 1.2 s GT TM D DRM(MAX) GT dI /dt = 5 A/s, R = 68 G G Circuit commutated turn off time t V = 67% V , T = 125 C, I = 20 A, V = 25 V 55 s q D DRM(MAX) j TM R dI /dt = 30 A/S, dV /dt = 50 V/s, R = 100 T D GK V I = 24 A, T = 380 s 1.6 V TM TM p V Threshold voltage T = 125 C 0.85 V T0 j R Dynamyc restistance T = 125 C 30 m d j T = 25 C 5 A I j DRM V = V DRM RRM I RRM T = 125 C 2 mA j 1. T = 25 C, unless otherwise specified j 2/8 Doc ID 16339 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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