TM8050H-8D3 Datasheet 3 80 A 800 V high temperature thyristor (SCR) in D PAK package Features A High junction temperature: T = 150 C j Blocking voltage: V = V = 800 V DRM RRM Nominal current: I = 80 A T(RMS) G Gate triggering current: I max. = 50 mA GT K High noise immunity: dV/dt > 1 kV/s A 3 Surface mounted device D PAK for compact designs K Increase of thermal margin due to extended T up to 150 C j G Low I and I in blocking state D R 3 D PAK Ecopack2 (includes halogen free & RoHS compliance) Applications AC-DC rectifier controlled bridge Motorbike voltage regulator Variable speed motor drive Battery charging system AC solid state relay By-pass switch of UPS Industrial welding systems Motor soft starter Product status link TM8050H-8D3 Description Product summary 3 Available in power surface mount package (D PAK), the TM8050H-8D3 device is an 800V SCR thyristor suitable for applications where high power switching (I = 80 T(RMS) I 80 A T(RMS) A) and low power dissipation (V = 1.55 V at 160 A) are key features. These TM V /V 800 V DRM RRM features make it ideal for motorbike voltage regulator, by-pass AC switch, controlled rectifier bridge, solid state relay, battery charger, welding equipment and motor driver I 50 mA GT applications. T 150 C j DS11507 - Rev 4 - August 2019 www.st.com For further information contact your local STMicroelectronics sales office.TM8050H-8D3 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise stated j Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) 80 A T(RMS) T = 130 C c I Average on-state current (180 conduction angle) 50 A T(AV) t = 8.3 ms 731 p I Non repetitive surge peak on-state current, V = 0 V T initial = 25 C A TSM R j t = 10 ms 670 p 2 2 2 T = 25 C 2245 I t I t value for fusing j A s V /V Maximum repetitive symmetric blocking voltage 800 V RRM DRM Critical rate of rise of on-state current T = 25 C dl/dt F = 50 Hz 200 A/s j I = 2 x I , tr 100 ns G GT I t = 20 s T = 150 C GM Peak gate current p j 8 A P T = 150 C Average gate power dissipation 1 W G(AV) j V Maximum peak reverse gate voltage 5 V RGM T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature soldering during 10 s 245 C L Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 2.5 I V = 12 V, R = 33 mA GT D L Max. 50 V V = 12 V, R = 33 Max. 1.5 V GT D L V V = V , R = 3.3 k T = 125 C Min. 0.2 V GD D DRM L j (1) I = 500 mA, gate open I Max. 100 mA H T I I = 1.2 x I L G GT Max. 125 mA t I = 80 A , V = V , I = 200 mA, dI /dt = 0.2 A/s Typ. 3 s gt T D DRM G G V = 67% V , gate open T = 150 C dV/dt Min. 1000 V/s D DRM j I = 33 A, dI /dt = 10 A/s, VR = 75 V, T T t T = 150 C Max. 150 s q j V = 400 V, dV /dt = 20 V/s, t = 100 s D D P 1. For both polarities of A2 referenced to A1 DS11507 - Rev 4 page 2/10