NTE5427 thru NTE5429 Silicon Controlled Rectifier (SCR) 7 Amp, TO5 Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (T = +110C), V C RRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak OffState Voltage (T = +110C), V C DRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On State Current (T = +80C, Conduction Angle of 180), I . . . . . . . . . . . . . . . . . . . 7A C T(RMS) Peak Surge (NonRepetitive) On State Current (One Cycle at 50 or 60Hz), I . . . . . . . . . . . 80A TSM Peak GateTrigger Current (3s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A GTM Peak Gate Power Dissipation (I I ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +110C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit I 1 mA Peak OffState Current V = Max, V = Max, RRM RRM DRM T = +110C, R = 1k C GK I 1 mA DRM Maximum OnState Voltage V I = 7A 2 V TM T DC Holding Current I 50 mA HOLD DC GateTrigger Current I V = 6VDC, R = 100 25 mA GT D L DC GateTrigger Voltage V V = 6VDC, R = 100 1.5 V GT D L Gate Controlled TurnOn Time t I x 3 2 s gt G GT 2 2 2 I t for Fusing Reference I t For SCR Protection 2.6 A sec Critical Rate of OffState Voltage dv/dt Gate Open, T = +100C 100 V/s C (critical).352 (8.95) Dia Max .325 (8.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Gate Cathode Anode 45 .031 (.793)