NTE5536 Silicon Controlled Rectifier (SCR) Description: The NTE5536 is a silicon controlled rectifier (SCR) in a TO220 type package designed for use as backtoback SCR output devices for solid state relays or applications requiring high surge opera- tion. Features: 400A Surge Capability 800V Blocking Voltage Absolute Maximum Ratings: Peak Reverse Blocking Voltage (Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RRM RMS Forward Current (T = +80C, Note 2), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A C T(RMS) Average Forward Current (All Conduction Angles, Note 2), I . . . . . . . . . . . . . . . . . . . . . . . . . 25A T(AV) Peak NonRepetitive Surge Current (1/2 Cycle, Sine Wave), I TSM 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A 1.5ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450A Forward Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GM Forward Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Forward Peak Gate Current (300 s, 120 PPS), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W thJA Note 1. V can be applied on a continuous DC basis without incurring damage. Ratings apply RRM for zero or negative voltage. Device should be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. Note 2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device i to be used at high sustained currents.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward Blocking Voltage V T = +125C 800 V DRM J Peak Forward or Reverse I , Rated V or V , T = +25C 10 A DRM DRM RRM J Blocking Current I RRM Rated V or V , T = +125C 2 mA DRM RRM J Forward ON Voltage V I = 80A, Note 3 1.6 2.0 V TM TM Gate Trigger Current, Continuous DC I Anode Voltage = 12V, R = 100 15 50 mA GT L Anode Voltage = 12V, R = 100 , 30 90 mA L T = 40C C Gate Trigger Voltage, Continuous DC V Anode Voltage = 12V, R = 100 1.0 1.5 V GT L Gate NonTrigger Voltage V Anode Voltage = 800V, R = 100 , 0.2 V GD L T = +125C J Holding Current I Anode Voltage = 12V 30 60 mA H TurnOn Time t I = 40A, I = 60mA 1.5 s gt TM GT Critical Rate of Rise of OffState dv/dt V = 800V, Gate Open, 50 V/ s DRM Voltage Exponential Waveform Note 3. Pulse test: Pulse Width 300 s, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate .100 (2.54) Anode/Tab