X-On Electronics has gained recognition as a prominent supplier of NTE5558 SCRs across the USA, India, Europe, Australia, and various other global locations. NTE5558 SCRs are a product manufactured by NTE. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

NTE5558 NTE

NTE5558 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE5558
Manufacturer: NTE
Category: SCRs
Description: Thyristor; 800V; 25A; 30mA; THT; TO220
Datasheet: NTE5558 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 15.2905 ea
Line Total: USD 15.29

Availability - 4
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 14.82
2 : USD 13.364
3 : USD 13.091
4 : USD 12.636

   
Manufacturer
Product Category
Case
Mounting
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE5558 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE5558 and other electronic components in the SCRs category and beyond.

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NTE5550 thru NTE5558 Silicon Controlled Rectifier (SCR) 25 Amp, TO220 Description: The NTE5550 thru NTE5558 SCRs are designed primarily for half wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features: Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability. Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability. Blocking Voltage to 800 Volts 300A Surge Current Capability Absolute Maximum Ratings: Peak Reverse Blocking Voltage (Note 1), V RRM NTE5550 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5552 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5554 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5556 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5558 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Forward Current (T = +85C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A C T(RMS) (All Conduction Angles), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A T(AV) Peak NonRepetitive Surge Current (8.3ms), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A TSM (1/2 Cycle, Sine Wave, 1.5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A Forward Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GM Forward Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Forward Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5C/W thJC Note 1. V for all types can be applied on a continuous dc basis without incurring damage. RRM Ratings apply for zero or negative gate voltage. Devices should not be tested for block- ing capability in a manner such that the voltage supplied exceeds the rated blocking voltage.Electrical Characteristics: (T = +25C unless otherwise noted.) C Parameter Symbol Min Typ Max Unit Peak Forward Blocking Voltage, (T = +125C) V V J DRM NTE5550 50 NTE5552 200 NTE5554 400 NTE5556 600 NTE5558 800 Peak Forward or Reverse Blocking Current, I , I DRM RRM (Rated V or V)T = +25C 10 A DRM RRM J T = +125C 2 mA J Forward ON Voltage, (I = 50A, Note 2) V 1.8 V TM TM Gate Trigger Current (Continuous DC), T = +25C I 40 mA C GT (Anode Voltage = 12Vdc, R = 100) T = 40C 25 75 L C Gate Trigger Voltage (Continuous DC) V 1 1.5 V GT (Anode Voltage = 12Vdc, R = 100, T = 40C) L C Gate NonTrigger Voltage V 0.2 V GD (Anode Voltage = Rated V , R =100, T = +125C) DRM L J Holding Current I 35 40 mA H (Anode Voltage = 12Vdc, T = 40C) C TurnOn Time t 1.5 2 s gt (I = 25A, I = 50mAdc) TM GT Turn Off Time (V = rated voltage) t s DRM q (I =25A, I = 25A) 15 TM R (I =25A, I = 25A, T = +125C) 35 TM R J Critical Rate of Rise of OffState Voltage dv/dt 50 V/s (Gate Open, Rated V , Exponential Waveform) DRM Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .500 .147 (3.75) (12.7) Dia Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate Anode/Tab .100 (2.54)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

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