NTE5563 Silicon Controlled Rectifier (SCR) 1600V, 1880 Amp, 2.9 Dia Hockey Puck Absolute Maximum Ratings: (T = +125C unless otherwise specified) J Repetitive Peak Voltages, V , V , V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V RRM DRM DSM Non Repetitive Peak Reverse Blocking Voltage, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Average OnState Current (Half Sine Wave), I T(AV) T = +55C (Double Side Cooled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400A hs T = +85C (Single Side Cooled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550A hs RMS On State Current (T = +25C, Double Side Cooled), I . . . . . . . . . . . . . . . . . . . . 2840A hs T(RMS) Continuous On State Current (T = +25C, Double Side Cooled), I . . . . . . . . . . . . . . . . . . . 2400A hs T Peak OneCycle Surge (10ms duration, 60% V reapplied), I . . . . . . . . . . . . . . . 20500A RRM TSM (1) Non Repetitive OnState Current (10ms duration, V 10V), I . . . . . . . . . . . . . . . . . 22550A R TSM (2) 2 Maximum Permissible Surge Energy (V 10V), I t R 2 10ms duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500000A s 2 3ms duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1890000A s Peak Forward Gate Current (Anode positive with respect to cathode), I . . . . . . . . . . . . . . . . 20A FGM Peak Forward Gate Voltage (Anode positive with respect to cathode), V . . . . . . . . . . . . . . . 22V FGM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V RGM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W G Peak Gate Power (100s pulse width), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W GM Rate of Rise of OffState Voltage (To 80% V gate open circuit), dv/dt . . . . . . . . . . . . . 200V/s DRM Rate of Rise of On State Current, di/dt (Gate drive 20V, 20 with t 1s, anode voltage 80% V ) r DRM Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/s Non Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/s Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C hs Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toHeatsink, R th(jhs) (For a device with a maximum forward voltage drop characteristic) Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.03C/W Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.06C/W Peak On State Voltage (I = 2550A), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41V TM TM Forward Conduction Threshold Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.965V O Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.174mAbsolute Maximum Ratings (Contd): (T = +125C unless otherwise specified) J Repetitive Peak OffState Current (At V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA DRM DRM Repetitive Peak Reverse Current (At V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA RRM RRM Maximum Gate Current (V = 6V, I = 2A, T = +25C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA A A J GT Maximum Gate Voltage (V = 6V, I = 2A, T = +25C), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V A A J GT Maximum Holding Current (V = 6V, I = 2A, T = +25C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A A A J H Maximum Gate Voltage Which Will Not Trigger Any Device, V . . . . . . . . . . . . . . . . . . . . . . . 0.25V GD .190 (4.8) 20 2.913 (74.0) Dia 1.700 (43.0) .140 x .118 (3.5 x 3.0) Dia (2 Holes) .007 1.850 Cathode (0.03) (47.0) Dia 1.090 (27.7) Gate Terminal Anode 1.850 (47.0) Dia