NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR) 35 Amp, TO48 Isolated Stud Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO 48 isolated stud TO48 type package designed for industrial and consumer applications such as power supplies, bat- tery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak OffState Voltage & Reverse Voltage (T = +100C), V , V J DRM RRM NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On State Current (T = +75C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A C T(RMS) Peak Surge (Non Repetitive) On State Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A TSM Peak GateTrigger Current (3s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 GTM Peak Gate Power Dissipation (I for 3s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C oper Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W thJC Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I , T = +100C, Gate Open, V &V 2.0 mA DRM J DRM RRM I RRM Maximum OnState Voltage (Peak) V T = +25C 1.6 V TM C DC Holding Current I T = +25C, Gate Open 50 mA HO C DC Gate Trigger Current I Anode Voltage = 12Vdc, R = 30, 30 mA GT L T =+ 25C C DC Gate Controlled TurnOn Time T I = 150mA , t +t 2.5 s GT GT D R Critical Rate of Rise of OffState Voltage Critical T = +100C, Gate Open 100 V/s C dv/dt.562 (14.28) Max Cathode Anode Gate 1.260 (32.0) Max .595 (15.1) Max .445 (11.3) 1/4 28 UNF2A Max Isolated Stud