X-On Electronics has gained recognition as a prominent supplier of NTE5599 SCRs across the USA, India, Europe, Australia, and various other global locations. NTE5599 SCRs are a product manufactured by NTE. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

NTE5599 NTE

NTE5599 electronic component of NTE
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See Product Specifications
Part No.NTE5599
Manufacturer: NTE
Category: SCRs
Description: Hockey-puck thyristor; 1.2kV; 1.2kA; 200mA; Ifsm:24.65kA; 2,9
Datasheet: NTE5599 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 459.4275 ea
Line Total: USD 459.43 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 459.4275
10 : USD 378.0432
25 : USD 352.836
50 : USD 330.7824

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 508.1397
10 : USD 469.728
100 : USD 468.9562

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 481.4484

   
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Forward Impulse Current
Turn-On Time
Max Off-State Voltage
Gate Current
Load Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE5599 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE5599 and other electronic components in the SCRs category and beyond.

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NTE5598 & NTE5599 Silicon Controlled Rectifier (SCR) 1800 Amp RMS, 2.9 Dia. Hockey Puck Features: Low On State Voltage High di/dt Capability High dv/dt Capability 2 Excellent Surge and I t Ratings Applications: Power Supplies Motor Control Absolute Maximum Ratings: Repetitive Peak Voltages, V , V RRM DRM NTE5598 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5599 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non Repetitive Peak Reverse Blocking Voltage, V RSM NTE5598 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5599 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On State Current (180 Sine Wave), I T(AV) T = +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1780A C T = +85C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200A C RMS On State Current, I T(RMS) T = +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2790A C T = +85C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880A C Peak One Cycle Surge On State Current (Non Repetitive), I TSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27000A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24650A Rate of Rise of On State Current, di/dt Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A/s Non Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/s 2 2 2 I t for Fusing fo One Cycle (60Hz), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3040000A s Peak Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W G(av) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Mounting Force . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5000 to 5500 lb. (2270 to 2500 kg.) Maximum Thermal Resistance (T = +25C, Double Sided Cooling) J JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.023C/W th(jc) Case toSink, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0075C/W th(cs) Rev. 910Electrical Characteristics: (T = +25C unless otherwise specified) J Max. Repetitive Peak Reverse Leakage Current (T = +125C, V = V ), I . . . . . . . . . 75mA J R RRM RRM Max. Repetitive Peak Forward Leakage Current (T = +125C, V = V ), I . . . . . . . . . 75mA J D DRM DRM Max. Peak OnState Voltage (I = 1500A Peak, Duty Cycle < 0.1%), V . . . . . . . . . . . . . . 1.35V TM TM Max. Threshold Voltage, Low Level (T = +125C, I = 15%, I to I ), V . . . . . 0.60559V J T(av) T(av) (TO)1 Max. Slope Resistance, Low Level (T = +125C, I = 15%, I to I ), r . . . . . . . 0.2681m J T(av) T(av) T1 Max. Threshold Voltage, High Level (T = +125C, I = I to I ), V . . . . . . . . . . 0.64284V J T(av) TSM (TO)2 Max. Slope Resistance, High Level (T = +125C, I = I to I ), r . . . . . . . . . . . . 0.1906m J T(av) TSM T2 Max. V Coefficients, Low Level (T = +125C, I = 15%, I to I ) TM J T(av) T(av) A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55126 1 B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.21303 1 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.433E 04 1 D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.003097 1 Max. V Coefficients, High Level (T = +125C, I = I to I ) TM J T(av) TSM A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5287 1 B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.457 1 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.001238 1 D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.43650 1 Typical TurnOn Time (I = 1000A, V = 450V), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3s TM D on Typical TurnOff Time, t q (T = +125C, I = 250A, di /dt = 50A/s Reapplied, dv/dt = 20V/s Linear to 80% V ) 350s J T R DRM Min. Critical dv/dt Exponential to V (T = +125C), dv/dt . . . . . . . . . . . . . . . . . . . . . . 300V/s DRN=M J Max. Gate Trigger Current (T = +25C, V = 12V), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA J D GT Max. Gate Trigger Voltage (T = +25C, V = 12V), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V J D GT Max. NonTriggering Gate Voltage (T = +125C, V = V ), V . . . . . . . . . . . . . . . . . . . 0.15V J D DRM GDM Peak Forward Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A GTM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GRM 12.000 (304.8) Typ .145 (3.69) Dia x .090 (2.29) Deep For No.6 Screw 2.900 (73.66) Max Cathode Marking 1.855 (47.12) Cathode Potential Max .050 (1.27) Min (Red) 1.070 (27.18) Max Gate (White) .050 (1.27) Min Anode 1.855 (47.12) Max 2.640 (67.06) Max

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