NTE56 NTE

NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator TO220 Full Pack Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V ...................................................... 80V CEO Collector Base Voltage, V ...................................................... 100V CBO EmitterBase Voltage, V .......................................................... 6V EBO Collector Current, I ................................................................. 3A C Base Current, I .................................................................... 1A B Collector Power Dissipation (T = +25C), P ......................................... 25W C D Junction Temperature, T ......................................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 100V 10 A CBO CB Emitter Cutoff Current I V = 6V 100 A EBO EB Collector Emitter Breakdown Voltage V I = 25mA 80 V (BR)CEO C DC Current Gain h V = 4V, I = 0.5A 500 FE CE C CollectorEmitter Saturation Voltage V I = 2A, I = 50mA 0.5 V CE(sat) C B Current GainBandwidth Product f V = 12V, I = 0.2A 15 MHz T CE E Capacitance C V = 10V, f = 1MHz 50 pF OB CB Rev. 615.165 (4.2) .398 (10.1) .110 (2.8) .157 (4.0) .331 (8.4) Isol .665 (16.9) BEC .154 (3.9) .512 (13.0) Min .100 (2.54) .094 (2.4)